TI BQ24120电池充电管理IC数据手册

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The TI-BQ24120.pdf is a detailed document outlining the specifications and features of the TI-BQ24120 battery charger IC. This IC is designed for use in portable electronic devices such as smartphones and tablets, providing efficient and reliable charging capabilities. The TI-BQ24120.pdf includes information on the various pins and functions of the IC, such as IN1, IN4, IN6, VCC2, STAT1, and STAT2. These pins are responsible for input voltage, status indication, and communication with the device being charged. The document also provides details on the power distribution and thermal management features of the IC, ensuring safe and efficient charging of the connected battery. Additionally, the TI-BQ24120.pdf details the charge termination mechanisms and protections built into the IC, such as ChargeDone, AdapterPresent, and various thermal shutdown thresholds. These features help prevent overcharging, overvoltage, and overheating of the battery pack, ensuring the long-term health and safety of the device being charged. Furthermore, the document includes a detailed schematic and typical application circuit for the TI-BQ24120, showing how to properly connect the IC to the battery pack and external components. This information helps designers and engineers implement the IC into their designs effectively, maximizing the performance and reliability of the charging system. Overall, the TI-BQ24120.pdf provides a comprehensive overview of the TI-BQ24120 battery charger IC, showcasing its features, specifications, and application guidelines. With its advanced charging capabilities and robust protections, this IC is a versatile and reliable solution for portable electronic devices in need of efficient and safe battery charging.

bq24120

bq24123

bq24125

www.ti.com

SLUS688H –MARCH 2006–REVISED NOVEMBER 2015

Electrical Characteristics (continued)

= 0°C to 125°C and recommended supply voltage range (unless otherwise stated)

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

CHARGE TERMINATION (CURRENT TAPER) DETECTION

TERM

Charge current termination detection range V

I(BAT)

> V

OREG

- V

RCH

15 200 mA

Charge termination detection set voltage,

TERM

I(BAT)

> V

OREG

- V

RCH

100 mV

ISET2

(ISET2)

Termination current set factor 1000 V/A

Charger termination accuracy V

I(BAT)

> V

OREG

- V

RCH

–20% 20%

Both rising and falling,

dg-TERM

Deglitch time for charge termination 20 30 40 ms

2-mV overdrive t

RISE

, t

FALL

= 100 ns

TEMPERATURE COMPARATOR AND VTSB BIAS REGULATOR

LTF

Cold temperature threshold, TS, % of bias V

LTF

= V

O(VTSB)

× % LTF/100 72.8% 73.5% 74.2%

HTF

Hot temperature threshold, TS, % of bias V

HTF

= V

O(VTSB)

× % HTF/100 33.7% 34.4% 35.1%

Cutoff temperature threshold, TS, % of

TCO

= V

O(VTSB)

× % TCO/100 28.7% 29.3% 29.9%

bias

LTF hysteresis 0.5% 1.0% 1.5%

Both rising and falling,

dg-TS

Deglitch time for temperature fault, TS 20 30 40 ms

2-mV overdrive t

RISE

, t

FALL

= 100 ns

> V

IN(min)

O(VTSB)

TS bias output voltage 3.15 V

(VTSB)

= 10 mA 0.1 μF ≤ C

O(VTSB)

≤ 1 μF

IN(min)

O(VTSB)

TS bias voltage regulation accuracy –10% 10%

(VTSB)

= 10 mA 0.1 μF ≤ C

O(VTSB)

≤ 1 μF

BATTERY RECHARGE THRESHOLD

RCH

Recharge threshold voltage Below V

OREG

75 100 125 mV/cell

I(BAT)

< decreasing below threshold,

dg-RCH

Deglitch time 20 30 40 ms

FALL

= 100 ns 10-mV overdrive

STAT1, STAT2, AND PG OUTPUTS

OL(STATx)

Low-level output saturation voltage, STATx I

= 5 mA 0.5

OL(PG)

Low-level output saturation voltage, PG I

= 10 mA 0.1

CE , CELLS INPUTS

Low-level input voltage I

= 5 μA 0 0.4

High-level input voltage I

= 20 μA 1.3 V

TTC INPUT

PRECHG

Precharge timer 1440 1800 2160 s

CHARGE

Programmable charge timer range t

(CHG)

= C

(TTC)

× K

(TTC)

25 572 minutes

Charge timer accuracy 0.01 μF ≤ C

(TTC)

≤ 0.18 μF -10% 10%

TTC

Timer multiplier 2.6 min/nF

TTC

Charge time capacitor range 0.01 0.22 μF

TTC_EN

TTC enable threshold voltage V

(TTC)

rising 200 mV

SLEEP COMPARATOR

≤ V

IBAT

≤ V

IBAT

2.3 V ≤ V

I(OUT)

≤ V

OREG,

for 1 or 2 cells

+5 mV +75 mV

SLP-ENT

Sleep-mode entry threshold V

I(OUT)

= 12.6 V, R

= 1kΩ, V

≤ V

IBAT

≤ V

IBAT

bq24125

(2)

–4 mV +73 mV

SLP-EXIT

Sleep-mode exit hysteresis, 2.3 V ≤ V

I(OUT)

≤ V

OREG

40 160 mV

decreasing below threshold,

FALL

= 100 ns, 10-mV overdrive, 5 μs

PMOS turns off

dg-SLP

Deglitch time for sleep mode

decreasing below threshold,

FALL

= 100 ns, 10-mV overdrive, 20 30 40 ms

STATx pins turn off

UVLO

UVLO-ON

IC active threshold voltage V

rising 3.15 3.30 3.50 V

IC active hysteresis V

falling 120 150 mV

(2) For bq24125 only. R

is connected between IN and PGND pins and needed to ensure sleep entry.

Product Folder Links: bq24120 bq24123 bq24125

bq24120

bq24123

bq24125

SLUS688H –MARCH 2006–REVISED NOVEMBER 2015

www.ti.com

Electrical Characteristics (continued)

= 0°C to 125°C and recommended supply voltage range (unless otherwise stated)

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

PWM

7 V ≤ V

≤ V

CC(max)

400

Internal P-channel MOSFET on-resistance

4.5 V ≤ V

≤ 7 V 500

mΩ

7 V ≤ V

≤ V

CC(max)

130

Internal N-channel MOSFET on-resistance

4.5 V ≤ V

≤ 7 V 150

OSC

Oscillator frequency 1.1 MHz

Frequency accuracy –9% 9%

MAX

Maximum duty cycle 100%

MIN

Minimum duty cycle 0%

TOD

Switching delay time (dead time) 20 ns

syncmin

Minimum synchronous FET on time 60 ns

Synchronous FET minimum current-off

50 400 mA

threshold

(3)

BATTERY DETECTION

Battery detection current during time-out

DETECT

I(BAT)

< V

OREG

– V

RCH

2 mA

fault

DISCHRG1

Discharge current V

SHORT

< V

I(BAT)

< V

OREG

– V

RCH

400 μA

DISCHRG1

Discharge time V

SHORT

< V

I(BAT)

< V

OREG

– V

RCH

1 s

WAKE

Wake current V

SHORT

< V

I(BAT)

< V

OREG

– V

RCH

2 mA

WAKE

Wake time V

SHORT

< V

I(BAT)

< V

OREG

– V

RCH

0.5 s

Begins after termination detected,

DISCHRG2

Termination discharge current 400 μA

I(BAT)

≤ V

OREG

DISCHRG2

Termination time 262 ms

OUTPUT CAPACITOR

Required output ceramic capacitor range

OUT

from SNS to PGND, between inductor and 4.7 10 47 μF

SNS

Required SNS capacitor (ceramic) at SNS

SNS

0.1 μF

PROTECTION

Threshold over V

OREG

to turn off P-channel

OVP

OVP threshold voltage MOSFET, STAT1, and STAT2 during charge 110 117 121 %V

O(REG)

or termination states

LIMIT

Cycle-by-cycle current limit 2.6 3.6 4.5 A

SHORT

Short-circuit voltage threshold, BAT V

I(BAT)

falling 1.95 2 2.05 V/cell

SHORT

Short-circuit current V

I(BAT)

≤ V

SHORT

35 65 mA

SHTDWN

Thermal trip 165

°C

Thermal hysteresis 10

(3) N-channel always turns on for approximately 60 ns and then turns off if current is too low.

7.6 Dissipation Ratings

< 40°C DERATING FACTOR

PACKAGE Θ

POWER RATING ABOVE T

= 40°C

RHL

(1)

46.87°C/W 2.15°C/W 1.81 W 0.021 W/°C

(1) This data is based on using the JEDEC High-K board, and the exposed die pad is connected to a copper pad on the board. This is

connected to the ground plane by a 2x3 via matrix.

Product Folder Links: bq24120 bq24123 bq24125

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