"AIKB20N60CT INFINEON 英飞凌电子元器件芯片.pdf" - 电子元器件芯片的应用与特性简介 - CSDN文库

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Datasheet 4 V2.1

2017-02-09

AIKB20N60CT

TRENCHSTOP

TM

Series

ElectricalCharacteristic,atT

vj

=25°C,unlessotherwisespecified

Value

min. typ. max.

Parameter Symbol Conditions Unit

StaticCharacteristic

Collector-emitter breakdown voltage V

(BR)CES

V

GE

=0V,I

C

=0.20mA 600 - - V

Collector-emitter saturation voltage V

CEsat

V

GE

=15.0V,I

C

=20.0A

T

vj

=25°C

T

vj

=150°C

-

-

1.50

1.85

2.05

-

V

Diode forward voltage V

F

V

GE

=0V,I

F

=20.0A

T

vj

=25°C

T

vj

=150°C

-

-

1.65

1.65

2.05

-

V

Gate-emitter threshold voltage V

GE(th)

I

C

=0.29mA,V

CE

=V

GE

4.1 4.9 5.7 V

Zero gate voltage collector current I

CES

V

CE

=600V,V

GE

=0V

T

vj

=25°C

T

vj

=150°C

-

-

-

550

40

-

µA

Gate-emitter leakage current I

GES

V

CE

=0V,V

GE

=20V - - 100 nA

Transconductance g

fs

V

CE

=20V,I

C

=20.0A - 11.0 - S

Integrated gate resistor r

G

none Ω

ElectricalCharacteristic,atT

vj

=25°C,unlessotherwisespecified

Value

min. typ. max.

Parameter Symbol Conditions Unit

DynamicCharacteristic

Input capacitance C

ies

- 1100 -

Output capacitance C

oes

- 71 -

Reverse transfer capacitance C

res

- 32 -

V

CE

=25V,V

GE

=0V,f=1MHz pF

Gate charge Q

G

V

CC

=480V,I

C

=20.0A,

V

GE

=15V

- 120.0 - nC

Internal emitter inductance

measured 5mm (0.197 in.) from

case

L

E

- 7.0 - nH

Short circuit collector current

Max. 1000 short circuits

Time between short circuits: ≥ 1.0s

I

C(SC)

V

GE

=15.0V,V

CC

≤400V,

t

SC

≤5µs

T

vj

=150°C

-

183

- A

SwitchingCharacteristic,InductiveLoad

Value

min. typ. max.

Parameter Symbol Conditions Unit

IGBTCharacteristic,atT

vj

=25°C

Turn-on delay time t

d(on)

- 18 - ns

Rise time t

r

- 14 - ns

Turn-off delay time t

d(off)

- 199 - ns

Fall time t

f

- 42 - ns

Turn-on energy E

on

- 0.31 - mJ

Turn-off energy E

off

- 0.46 - mJ

Total switching energy E

ts

- 0.77 - mJ

T

vj

=25°C,

V

CC

=600V,I

C

=20.0A,

V

GE

=0.0/15.0V,

R

G(on)

=12.0Ω,R

G(off)

=12.0Ω,

Lσ=131nH,Cσ=31pF

Lσ,CσfromFig.E

Energy losses include “tail” and

diode reverse recovery.

剩余15页未读，继续阅读

芯脉芯城

粉丝: 3
资源: 4030

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