安森美ESD保护器件DF3A6.8FUT1-D：高效双极硅齐纳二极管数据手册

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安森美半导体ESD保护器件DF3A6.8FUT1-D数据手册详细介绍了该公司的一款高性能、低功耗的双共阳极齐纳二极管，专门设计用于提供瞬态过电压保护。这款器件在紧凑的SC-70封装下，提供了两种独立的单向配置选项，对于空间有限的电路板设计非常理想，如计算机、打印机、医疗设备等敏感电子设备。产品特点包括： 1. 无铅封装：考虑到环保要求，该器件采用了无铅包装，符合RoHS标准。 2. SC-70封装：允许用户灵活地将两个单向保护通道集成在一个器件上，节约电路板空间。 3. 低漏电流：在5.0V电压下，漏电流极低，仅为1.0μA，有助于节省电能并确保设备稳定性。 4. 电压特性：齐纳电压在6.4V至7.2V之间，典型工作电流为5.0mA，确保了有效的保护性能。 5. ESD保护等级：符合人体模型和接触放电（IEC 61000-4-2）标准，可抵御高达16kV的人体静电和30kV的接触放电，提供了强大的电磁兼容性保障。 6. 功率处理能力：在短时间内，如1.0毫秒内，每个单向通道的最大峰值功率可达24W；而在20秒的持续时间内，这个值提升到150W，这表明其在应对突发浪涌时具有较高的耐受能力。此外，机械特性方面，DF3A6.8FUT1-D采用真空转移模压工艺制造，确保了内部结构的完整性，以及出色的热稳定性和抗环境应力的能力。这些特性使其成为现代电子产品中不可或缺的ESD保护解决方案，尤其适合那些对电路板尺寸、可靠性和安全性有高要求的应用场合。在选择和使用该器件时，设计师应充分考虑其性能参数和应用环境，以确保设备的正常运行和长期稳定。

 Semiconductor Components Industries, LLC, 2004

July, 2004 − Rev. 1

1 Publication Order Number:

DF3A6.8FUT1/D

DF3A6.8FUT1

Preferred Device

Zener Transient Voltage

Suppressor

Dual Common Anode Zeners for ESD

Protection

These dual monolithic silicon zener diodes are designed for

applications requiring transient overvoltage protection capability. They

are intended for use in voltage and ESD sensitive equipment such as

computers, printers, business machines, communication systems,

medical equipment and other applications. Their dual junction common

anode design protects two separate lines using only one package. These

devices are ideal for situations where board space is at a premium.

Features

• Pb−Free Package is Available

• SC−70 Package Allows Two Separate Unidirectional Configurations

• Low Leakage < 1.0 A @ 5.0 V

• Breakdown Voltage: 6.4−7.2 V @ 5.0 mA

• ESD Protection Meeting:16 kV Human Body Model

30 kV Contact = IEC61000−4−2

• Peak Power: 24 W @ 1.0 ms (Unidirectional), per Figure 1

• Peak Power: 150 W @ 20 s (Unidirectional), per Figure 2

Mechanical Characteristics

• Void Free, Transfer−Molded, Thermosetting Plastic Case

• Corrosion Resistant Finish, Easily Solderable

• Package Designed for Optimal Automated Board Assembly

• Small Package Size for High Density Applications

MAXIMUM RATINGS

Rating Symbol Value Unit

Steady State Power Dissipation

Derate above 25°C (Note 1)

200

1.6

°mW°

mW/°C

Thermal Resistance Junction−to−Ambient R



618 °C/W

Operating Junction and Storage

Temperature Range

, T

stg

− 55 to

+150

°C

Peak Power Dissipation @ 1.0 ms

(Note 2) @ T

= 25°C

20 W

Peak Power Dissipation @ 20 s (Note 3)

@ T

= 25°C

150 W

ESD Discharge

MIL STD 883C − Method 3015−6

IEC61000−4−2, Air Discharge

IEC61000−4−2, Contact Discharge

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits

are exceeded, device functional operation is not implied, damage may occur

and reliability may be affected.

1. Mounted on FR−5 Board = 1.0 X 0.75 X 0.062 in.

2. Non−repetitive pulse per Figure 1.

3. Non−repetitive pulse per Figure 2.

SC−70/SOT−323

CASE 419

STYLE 4

Device Package Shipping

†

ORDERING INFORMATION

DF3A6.8FUT1 SC−70 3000/Tape & Reel

MARKING

DIAGRAM

Preferred devices are recommended choices for future use

and best overall value.

http://onsemi.com

68 = Specific Device Code

M = Date Code

DF3A6.8FUT1G SC−70

(Pb−Free)

3000/Tape & Reel

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

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