In2Se3/p-Si异质结：带偏移与超快响应紫外-可见光探测器
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"这篇研究论文探讨了n-In2Se3 / p-Si异质结在紫外线到可见光（UV-VIS）光探测器中的应用，该结构具有带偏移和超快速响应特性。通过脉冲激光沉积（PLD）技术制备了高质量的g-In2Se3薄膜和异质结。通过XPS分析，确定了这种异质结的带偏移为类型II结构，价带偏移(DEv)为1.2±0.1eV，导带偏移(DEc)为0.27±0.1eV。这种n-In2Se3 / p-Si异质结光探测器在紫外到可见光照射下表现出高响应性，并具有高度稳定的光检测特性，响应/恢复时间为15/366毫秒。其超快响应时间得益于类型II带对齐，有助于电子-空穴对的分离，减少复合，显示出该材料在光探测器领域的巨大潜力。"
这篇论文详述了二维层状硒化铟(In2Se3)与硅(p-Si)形成的异质结在光探测器中的优势。首先，作者利用脉冲激光沉积技术制备了高质量的n型In2Se3薄膜，并将其与p型硅结合形成异质结。通过X射线光电子能谱(XPS)研究，发现该异质结的带结构为类型II，这意味着电子和空穴分别位于不同的材料中，有利于电荷分离。
带偏移的测量结果显示，价带偏移DEv为1.2±0.1电子伏特，而导带偏移DEc为0.27±0.1电子伏特。这种带偏移对于光电转换至关重要，因为它决定了载流子的迁移路径和器件的性能。在n-In2Se3 / p-Si异质结中，当受到UV-VIS光照射时，产生的电子-空穴对能够在带偏移的作用下有效分离，从而提高了光探测器的响应效率。
实验表明，该光探测器在紫外到可见光范围内具有高响应性，意味着它能够有效地探测不同波长的光。同时，设备展示了非常稳定的光检测特性，响应时间和恢复时间分别为15毫秒和366毫秒，这表明了其超快的响应速度。这种超快响应是由于类型II带对齐，使得电子-空穴对能够迅速分离，减少了它们在复合前的相互作用，从而提升了光探测器的响应速度。
最后，论文指出这些优异的性质使n-In2Se3 / p-Si异质结成为光探测器领域的一个有前景的候选者。这种新型光探测器不仅具有超快响应，而且能覆盖宽光谱范围，因此在环境监测、光学通信和光电子设备等领域有着广泛的应用潜力。
Band offset and an ultra-fast response UV-VIS
photodetector in g-In
2
Se
3
/p-Si heterojunction
heterostructures
Y. X. Fang,
a
H. Zhang,
a
F. Azad,
b
S. P. Wang,
c
F. C. C. Ling
d
and S. C. Su
*
ad
High-quality g-In
2
Se
3
thin films and a g-In
2
Se
3
/p-Si heterojunction were prepared using pulse laser
deposition (PLD). The band offset of this heterojunction was studied by XPS and the band structure was
found to be type II structure. The valence band offset (DE
v
) and the conduction band offset (DE
c
) of the
heterojunction were determined to be 1.2 0.1 eV and 0.27 0.1 eV, respectively. The g-In
2
Se
3
/p-Si
heterojunction photodetector has high responsivity under UV to visible light illumination. The
heterojunction exhibits highly stable photodetection characteristics with an ultrafast response/recovery
time of 15/366 ms. The ultrafast response time was attributed to type II structure band alignment, which
was good for the separation of electron–hole pairs and it can quickly reduce recombination. These
excellent properties make g-In
2
Se
3
/p-Si heterojunctions a promising candidate for photodetector
applications.
1 Introduction
Two-dimensional layered semiconductors exhibit unique
physical and chemical properties compared to their bulk
counterparts. They have great application prospects in the eld
of nano-optoelectronic devices and have attracted widespread
attention.
1–4
However, stable high-performance of these two-
dimensional layered semiconductor materials based devices
has yet to be further explored. In the past decade, layered
materials such as metal dichalcogenides (MoS
2
,
5–7
MoSe
2
,
8–10
WSe
2
,
11–13
WS
2
(ref. 14–17)), III–VI semiconductors (GaSe,
18,19
GaS,
20,21
InSe,
22,23
In
2
Se
3
(ref. 24 and 25)), V–VI semiconductors
(Bi
2
Te
3
(ref. 26 and 27)) and elemental semiconductors (black
phosphorus
28
) have found useful applications in nano-
electronics and optoelectronics. Of the various chalcogenides,
In
2
Se
3
is an interesting III–VI n-type semiconductor due to its
multiphase and excellent optical properties. It is also known to
have at least ve crystal forms (a, b, g, d and k). At different
temperatures with a specic stoichiometric ratio, different
phases and crystal structures can coexist in case of In
2
Se
3
.
24,29,30
Generally, In
2
Se
3
is a direct narrow bandgap semiconductor.
Multilayered (ML) indium selenide exhibits high electron
mobility, remarkable light absorption efficiency and sensitivity,
and good stability which makes it one of the most promising
materials for photodetection purposes. Because silicon is
a general-purpose substrate for photovoltaic applications,
combining In
2
Se
3
with mature silicon technology has great
potential for the preparation of photoelectric sensors with high
detection performance. Current photodetection technology
targets multi-spectral (wideband or dual-band) photodetectors
for sensing, imaging under atmospheric conditions, object
discrimination and optical communication applications.
31
Up to now, various synthetic approaches have been used to
prepare different In
2
Se
3
heterostructures. Zhang et al. prepared
the In
2
Se
3
/ZnO heterojunction and studied its offset structure.
32
Chen et al. developed an effective colloidal process involving
thermal injection to synthesize uniform nanoowers consisting
of 2D g-In
2
Se
3
nanosheets.
33
Zheng et al. prepared a self-
assembled broadband b-In
2
Se
3
/Si photodetector array for weak
signal detection.
34
Yang et al. Prepared the In
2
Se
3
/Pi nanosheets
and studied its photoresponsivity.
35
g-In
2
Se
3
/Si has emerged as
one of the most promising materials for visible photodetection
due to its remarkable responsivity and detectivity in a wide range
of wavelengths. In this work, a high-quality n type g-In
2
Se
3
thin
lm was successfully prepared by pulsed laser deposition (PLD).
And we studied the valence band offset (DE
v
) and the conduction
band offset (DE
c
) of the heterojunction.
The g-In
2
Se
3
/p-Si heterojunction was prepared by depositing
In
2
Se
3
on p-Si substrate. The band offset of this heterojunction
was studied by XPS. The g-In
2
Se
3
/p-Si heterojunction exhibits
signicant responsivity and detectability over a wide range of
wavelength. This heterojunction photodiode exhibits excellent
response characteristics as an optoelectronic device.
a
Institute of Optoelectronic Material and Technology, South China Normal University,
Guangzhou 510631, P. R. China. E-mail: shichensu@scnu.edu.cn
b
School of Natural Sciences (SNS), National University of Sciences and Technology
(NUST), H-12 Islamabad, Pakistan
c
Institute of Applied Physics and Materials Engineering, University of Macau, Macau
999078, China
d
Department of Physics, The University of Hong Kong, Pokfulam Road, Hong Kong,
People's Republic of China
Cite this: RSC Adv.,2018,8,29555
Received 3rd July 2018
Accepted 13th August 2018
DOI: 10.1039/c8ra05677c
rsc.li/rsc-advances
This journal is © The Royal Society of Chemistry 2018 RSC Adv.,2018,8, 29555–29561 | 29555
RSC Advances
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