Enhanced lateral photovoltaic effect in the p-n
h
eterojunction composed of manganite and
silicon by side irradiation for position sensitive
detecting
Juan Du,
1,2
Hao Ni,
2
Kun Zhao,
2,4,*
Y.-C. Kong,
3
H. K. Wong,
3
Songqing Zhao,
2
and
S
haohua Chen
2
1
State Key Laboratory of Heavy Oil Processing, China University of Petroleum, Beijing 102249, China
2
College of Science, China University of Petroleum, Beijing 102249, China
3
Department of Physics, Chinese University of Hong Kong, Hong Kong, China
4
International Center for Materials Physics, Chinese Academy of Sciences, Shenyang 110016, China
*
zhk@cup.edu.cn
Abstract: Lateral photovoltaic effect has been studied in p-
La
0.67
Ca
0.33
MnO
3
/n-Si heterojunction. Under illumination of continuous
808 nm laser beam on the film surface, a transient photovoltaic overshoot
accompanied with the steady signal was observed when the laser turned off
and on. The open-circuit photovoltage had a linear dependence on
illuminated position, and the sensitivity reached 0.75 mVmW
−1
mm
−1
for
steady value and 6.25 mVmW
−1
mm
−1
for the transient peak value.
Especially, an enhancement in position detecting sensitivity was observed
when the interface of this heterojunciton was irradiated, which were 1.25
mVmW
−1
mm
−1
(steady value) and 26.0 mVmW
−1
mm
−1
(peak value). This
w
ork demonstrates a novel way to increase sensitivity for manganite-based
position sensitive detectors.
©2011 Optical Society of America
OCIS codes: (040.5160) Photodetectors; (310.6845) Thin film devices and applications;
(040.5350) Photoviltaic.
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Received 16 May 2011; revised 9 Jul 2011; accepted 20 Jul 2011; published 18 Aug 2011
29 August 2011 / Vol. 19, No. 18 / OPTICS EXPRESS 17260