1700V 碳化硅MOSFET 的sentaurus仿真代码

这是一个比较复杂的问题，因为sentaurus仿真代码通常需要根据具体的模型和电路设计来编写。不过，我可以给你提供一个简单的例子，供你参考：

# Sentaurus input file for 1700V SiC MOSFET simulation
# Define the material properties of SiC
material SiC {
   bandgap = 3.26 eV
   permittivity = 9.66
   density = 3.21 g/cm^3
   mobility = 900 cm^2/(V*s)
   dos effective mass = 0.3 m_e
}

# Define the device structure
structure SiC-MOSFET {
   layer SiC {
      thickness = 5 um
      doping = 1e16 /cm^3
   }
   layer SiO2 {
      thickness = 100 nm
      doping = 0
   }
   layer p-SiC {
      thickness = 1 um
      doping = 1e18 /cm^3
   }
   layer n-SiC {
      thickness = 1 um
      doping = 1e17 /cm^3
   }
   contact source {
      material = Al
      work function = 4.2 eV
      thickness = 100 nm
   }
   contact drain {
      material = Al
      work function = 4.2 eV
      thickness = 100 nm
   }
   contact gate {
      material = Ti
      work function = 4.9 eV
      thickness = 100 nm
   }
}

# Define the simulation parameters
simulation {
   temperature = 300 K
   solver type = newton-raphson
   solver convergence tolerance = 1e-6
   solver maximum iterations = 100
}

# Define the device operation
operation {
   bias source = 0 V
   bias drain = 1700 V
   bias gate = 10 V
}

# Run the simulation
run SiC-MOSFET

请注意，这只是一个简单的示例，实际的sentaurus仿真代码可能要比这个复杂得多，因为它需要考虑更多的物理效应和设备结构。