英飞凌BTN9970LV芯片中文版规格书。

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2 Pin configuration

Figure 4 Pin assignment BTN9970LV (top view)

Table 1 Pin definitions and functions

Pin Symbol I/O Function

1,2 GND – Ground

(1)

3 IN I Input

Defines whether high- or low-side switch is activated.

An internal pull down resistor is connected to this pin.

4 INH I Inhibit

When set to low device goes in tristate.

An internal pull down resistor is connected to this pin.

5 IS O Current sense, temperature sense, slew rate level and diagnostics

6,7 VS – Supply

(1)

8 (EP) OUT O Power output of the bridge

1) All terminal pins must be connected together on the PCB. All terminal pins are internally connected together.

PCB traces have to be designed to withstand the maximum current which can flow

Bold type: pin needs power wiring

BTN9970LV NovalithIC

™

High current PN half-bridge with integrated driver

2 Pin configuration

Datasheet 6 Rev. 1.0

2021-10-12

3 General product characteristics

The device is intended to be used in an automotive environment. The circumstances, how the device

environment must look like, are described in this chapter.

3.1 Absolute maximum ratings

Stresses above the ones listed here may cause permanent damage to the device. Exposure to absolute

maximum rating conditions for extended periods may aect device reliability.

Table 2 Absolute Maximum Ratings

= -40°C to 150°C; all voltages with respect to ground, positive current flowing into pin (unless otherwise

specified)

Parameter Symbol Values Unit Note or condition

Min. Typ. Max.

Voltages

Supply voltage V

-0.3 – 40 V –

Drain-source voltage high-side V

DS(HS)

-40 – – V T

≥ 25°C

Drain-source voltage high-side V

DS(HS)

-38 – – V T

< 25°C

Drain-source voltage low-side V

DS(LS)

– – 40 V T

≥ 25°C

Drain-source voltage low-side V

DS(LS)

– – 38 V T

< 25°C

Logic input voltage V

INH

-0.3 – 5.5 V –

Voltage between VS and IS pin V

SIS

-0.3 – 40 V –

Voltage at IS pin V

-0.3 – 40 V –

Currents

HS drain current |I

D(HS)

| – – I

OCH0

A Switch active

LS drain current |I

D(LS)

| – – I

OCL0

A Switch active

Temperatures

Junction temperature T

-40 – 150 °C –

Storage temperature T

stg

-55 – 150 °C –

ESD susceptibility

ESD robustness all pins (HBM) |V

ESD(HBM,local)

| – – 2 kV HBM

ESD robustness OUT vs GND

vs VS (HBM)

ESD(HBM,global)

| – – 6 kV HBM

ESD robustness all pins (CDM) |V

ESD(CDM)

| – – 500 TC CDM

(table continues...)

Not subject to production test, specified by design.

Maximum applicable single pulse current depends on t

pulse.

See figure maximum single pulse current.

Human body model “HBM” robustness: class 2 according to AEC-Q100-002.

Charged device model “CDM” robustness: class C2a according to AEC-Q100-011 Rev D. “TC” corresponds

to “test condition” according to AEC-Q100-011.

BTN9970LV NovalithIC

™

High current PN half-bridge with integrated driver

3 General product characteristics

Datasheet 7 Rev. 1.0

2021-10-12

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