铂修饰的VOx薄膜：室温甲烷传感器的制备与性能研究
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本篇研究论文主要探讨了铂（Pt）修饰的钒氧化物（Vanadium Oxide, VOx）薄膜在室温下对甲烷（CH4）气体的传感性能。作者团队由Jiran Liang、Junfeng Liu、Wenjiao Li和Ming Hu等组成，来自天津大学电子与信息工程学院，地址位于中国天津300072。
研究方法是通过直流磁控溅射技术将金属钒(V)沉积在蓝宝石基底上，形成VOx薄膜。接着，论文介绍了将Pt纳米颗粒沉积到已经形成的薄膜上，并采用快速热处理（Rapid Thermal Annealing, RTA）的方式，在450℃至470℃的氧气氛围中进行热处理，以优化铂粒子的分散和与VOx的相互作用。
利用扫描电镜（Scanning Electron Microscopy, SEM）和X射线衍射（X-ray Diffraction, XRD）技术对所制备的铂-VOx薄膜进行了表征。结果显示，得到的薄膜表现出不规则的棒状纳米粒子，平均直径约为100纳米，显示出良好的微观结构。此外，晶体结构分析揭示了薄膜中存在的单斜相的二氧化钒（Monoclinic Vanadium Dioxide, VO2），这表明铂的存在可能改变了原始氧化物的晶体形态。
这项工作的重要意义在于，它探索了铂作为掺杂元素如何增强VOx的甲烷传感器性能，特别是在室温下。通过控制纳米结构和热处理条件，研究人员可能优化了气体敏感层的活性位点，提高了对CH4的响应速度和选择性。这对于开发环境监测、工业过程控制等领域中的低功耗、高灵敏度甲烷传感器具有潜在应用价值。
本研究不仅提供了关于铂修饰VOx薄膜的制备工艺，还揭示了其在室温下对甲烷的敏感特性，为进一步探索新型高性能气体传感器材料奠定了基础。未来的研究可以围绕这些发现，深入探究铂对传感性能的具体影响机制以及优化策略。
Preparation
and
room
temperature
methane
sensing
properties
of
platinum-decorated
vanadium
oxide
films
Jiran
Liang
*
,
Junfeng
Liu,
Wenjiao
Li,
Ming
Hu
School
of
Electronics
and
Information
Engineering,
Tianjin
University,
Tianjin
300072,
PR
China
A
R
T
I
C
L
E
I
N
F
O
Article
history:
Received
28
February
2016
Received
in
revised
form
11
August
2016
Accepted
13
August
2016
Available
online
16
August
2016
Keywords:
A.
Oxides
B.
Sputtering
A.
Thin
films
A.
Nanostructures
A.
Semiconductors
A
B
S
T
R
A
C
T
Room
temperature
methane
(CH
4
)
response
characteristics
of
vanadium
oxide
(VO
x
)
thin
films
loaded
with
platinum
(Pt)
nanoparticles
were
investigated
for
detection
of
CH
4
.
The
Pt/VO
x
thin
films
have
been
prepared
on
sapphire
substrate
by
means
of
dc-magnetron
sputtering
of
V
metal,
followed
by
deposition
of
Pt
nanoparticles,
and
then
rapid
thermal
annealing
(RTA)
in
O
2
atmosphere
from
450
C
to
470
C.
SEM
and
XRD
were
used
to
investigate
the
morphology
and
crystal
structure
of
the
films.
The
results
showed
that
irregular
rod-shaped
particles
with
size
on
the
average
of
100
nanometers
and
the
monoclinic
vanadium
dioxide
(VO
2
)
were
obtained.
The
property
of
metal
to
insulator
transition
(MIT)
was
a
confirmation
of
the
prepared
VO
2
.
The
sensor
annealed
at
460
C
showed
the
largest
response
value
which
was
18.2
toward
methane
(CH
4
)
at
room
temperature
with
the
concentration
of
500
ppm.
The
optimal
operating
concentration
for
CH
4
detection
is
1500
ppm.
ã
2016
Elsevier
Ltd.
All
rights
reserved.
1.
Introduction
CH
4
is
a
kind
of
strong
absorbed,
flammable
and
explosive
substances
as
a
major
constituent
of
mash
gas,
firedamp
and
rock
gas.
It
is
well
known
that
a
small
spark
can
cause
violent
explosion
and
do
great
damage
to
human
beings
if
the
concentration
of
CH
4
reaches
a
critical
limit
(5%–15%).
Up
to
now,
there
are
various
semiconductor
oxide
nanostructured
materials
used
for
the
detection
of
CH
4
,
for
instance,
including
tin
oxide
[1,2],
zinc
oxide
[3,4]
etc.
However,
these
materials
sensors
operate
at
high
temperature
greater
than
100
C
to
get
good
response
sensitivity
toward
CH
4
,
which
could
cause
a
series
of
problems,
such
as
higher
power
consumption
and
a
reduction
in
their
stability.
Therefore,
it
is
of
great
importance
to
develop
a
convenient
and
applied
gas
sensor
which
can
be
operated
at
a
low
temperature
for
CH
4
detection.
Among
extensive
research
for
nanostructure
sensitive
materi-
als,
VO
x
has
been
studied
as
a
new
type
of
gas
sensitive
materials.
The
VO
x
family
consists
of
more
than
ten
kinds
of
compounds
with
vanadium
valence
from
+2
to
+5,
such
as
VO,
V
2
O
3
,
VO
2
and
V
2
O
5
etc.
In
the
meantime,
the
vanadium
dioxide
(VO
2
)
and
vanadium
pentoxide
(V
2
O
5
)
cause
intensive
research
interest
due
to
the
property
of
metal
to
insulator
transition.
The
transition
temperature
T
C
of
VO
2
is
around
68
C
[5]
with
a
reversible
change
from
monoclinic
structure
at
low
temperature
to
a
high-
temperature
tetragonal
rutile
structure
with
a
band
gap
about
0.7
eV
[6].
The
transition
temperature
T
C
of
V
2
O
5
is
around
250
C
[7].
They
have
been
successfully
applied
to
storage
devices
[8,9],
switching
circuit
[10,11]
and
smart
windows
[12,13].
There
are
several
commonly
used
methods
to
synthesize
nanostructured
thin
films,
such
as
sputtering
[14–17],
chemical
vapor
deposition
[18,19],
sol-gel
[20]
and
pulsed
laser
deposition
[21,22].
To
the
best
of
our
knowledge,
there
are
only
few
available
articles
reported
VO
x
is
associated
with
detection
of
CH
4
.
A.K.
Prasad’s
team
[23]
firstly
reported
the
single
VO
2
thin
film
for
detection
of
CH
4
by
sputtering
in
2014.
Recent
efforts
have
been
concentrated
on
enhancing
the
sensitivity
and
decreasing
the
operating
tempera-
ture
of
methane
sensor.
More
contact
surface
area
such
as
nanorods
and
nanowire
are
preferred
for
improving
sensitivity
for
CH
4
.
On
the
other
hand,
many
reports
available
claimed
adding
noble
metal
[24–26]
could
enhance
the
response
characteristics
of
gas
sensor
attributed
to
a
selective
promotion
of
the
desired
molecule
reaction
at
different
adsorbed
locations.
In
this
paper,
we
have
deposited
Pt
nanoparticles
on
the
nanostructured
VO
x
thin
films
for
the
detection
of
CH
4
at
room
temperature.
The
Pt/VO
x
films
sensor
structures
have
been
successfully
prepared
using
dc
magnetron
sputtering
for
the
deposition
of
metal
vanadium
thin
films,
adding
bit
of
Pt
particles,
and
then
RTA
to
obtain
nanostructured
VO
x
films
with
desired
composition
and
morphology.
*
Corresponding
author
at:
School
of
Electronics
and
Information
Engineering,
Tianjin
University,
92
Weijin
Road,
Nankai
District,
Tianjin
300072,
PR
China.
E-mail
address:
liang_jiran@tju.edu.cn
(J.
Liang).
http://dx.doi.org/10.1016/j.materresbull.2016.08.024
0025-5408/ã
2016
Elsevier
Ltd.
All
rights
reserved.
Materials
Research
Bulletin
84
(2016)
332–339
Contents
lists
available
at
ScienceDirect
Materials
Research
Bulletin
journa
l
homepage:
www.elsevier.com/locate/matresbu
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