TI TPD3S714-Q1：汽车USB接口的高效防护与功能安全解决方案
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TI-TPD3S714-Q1是一款专为汽车电子应用设计的高性能USB2.0接口保护器件，旨在确保设备的安全性和稳定性。这款器件主要关注以下几个关键特性：
1. **AEC-Q100标准兼容**：遵循严格的AEC-Q100汽车电子元件等级1规范，确保在极端温度条件下(-40°C至+125°C)的可靠性能。
2. **功能安全**：提供相关的文档支持，帮助工程师在设计功能安全系统时更好地集成和管理保护措施。
3. **短路保护**：对VBUS_CON、VD+和VD–引脚提供了全面的保护，包括电池短路(最高18V)和接地短路，以及VBUS短路。同时，还有IEC61000-4-2和ISO10605标准的ESD防护，抵抗高达±8kV的接触放电和±15kV的气隙放电。
4. **低阻抗开关**：采用低RONnFET VBUS开关，典型值为63mΩ，提供高效能的数据传输，即使在电池短路情况下也能保持高速数据通信。
5. **高速数据传输**：数据开关拥有1GHz的带宽，确保USB信号在长线缆下仍能保持480Mbps的高速传输质量。
6. **保护特性**：内置断续电流限制功能，能迅速响应550mA的过流情况，同时具备快速的过压保护，如VBUS开关的2us典型响应时间和数据开关的200ns响应时间。
7. **集成输入使能**：方便用户控制VBUS、VD+和VD–的供电状态，便于设备管理。
8. **故障指示**：提供故障输出信号，便于系统诊断和故障排查。
9. **热关断保护**：当温度过高时自动断开电源，防止器件过热损坏。
10. **小型封装**：16引脚SSOP封装，占用空间小，适合紧凑型汽车电子设计。
**应用领域**：
- TPD3S714-Q1广泛应用于各种汽车电子系统，如音响主机、后座娱乐系统、远程信息处理、USB集线器、导航模块和媒体接口等，确保这些设备与USB连接器的稳健交互。
TI-TPD3S714-Q1是一款为汽车电子市场设计的全方位保护器件，它不仅提供基本的短路和ESD防护，还在速度、精度和安全性上达到了高标准，是现代汽车电子设备中不可或缺的一部分。
6.7 Electrical Characteristics (continued)
over operating free-air temperature range, EN = 0 V, V
BUS_SYS
= 5 V, V
IN
= 3.3 V, VD+/VD–/D+/D–/V
BUS_CON
= float (unless
otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
I
LIM
Overcurrent limit V
BUS
Progressively load V
BUS_CON
until device
asserts FLT
550 700 850 mA
OVERTEMPERATURE PROTECTION
T
SD(RISING)
The rising overtemperature protection shutdown
threshold
V
BUS_SYS
= 5 V, EN = 0 V, No Load on
V
BUS_CON
, T
A
stepped up until FLT is asserted
150 165 180
℃
T
SD(FALLING)
The falling overtemperature protection shutdown
threshold
V
BUS_SYS
= 5 V, EN = 0 V, No Load on
V
BUS_CON
, T
A
stepped down from T
SD(RISING)
until
FLT is deasserted
125 130 140
℃
T
SD(HYST)
The overtemperature protection shutdown
threshold hysteresis
T
SD(RISING)
– T
SD(FALLING)
10 35 55
℃
OVP CIRCUIT—V
BUS
V
OVP(RISING)
Input overvoltage protection
threshold
V
BUS_CON
Increase V
BUS_CON
from 5 V to 7 V. Measure
when FLT is asserted
5.4 5.6 5.8 V
V
HYS(OVP)
Hysteresis on OVP V
BUS_CON
Difference between rising and falling OVP
thresholds on V
BUS_CON
50 mV
T
OVP(FALLING)
Input overvoltage protection
threshold
V
BUS_CON
Decrease V
BUS_CON
from 7 V to 5 V. Measure
when FLT is deasserted
5.36 5.74 V
V
UVLO(SYS_RISING)
Undervoltage lockout rising for
V
BUS_SYS
V
BUS_SYS
V
BUS_SYS
voltage rising from 0 V to 5 V 3.1 3.3 3.6 V
V
HYS(UVLO_SYS)
V
BUS_SYS
UVLO hysteresis V
BUS_SYS
Difference between rising and falling UVLO
thresholds on V
BUS_SYS
50 75 100 mV
V
UVLO(SYS_FALLING)
Undervoltage lockout falling
for V
BUS_SYS
V
BUS_SYS
V
BUS_SYS
voltage falling from 7 V to 3 V 3 3.2 3.5 V
V
SHRT(RISING)
Short-to-ground comparator
rising threshold
V
BUS_CON
Increase V
BUS_CON
voltage from 0 V until the
device transitions from the short-circuit to over-
current mode of operation
2.5 2.6 2.7 V
V
SHRT(FALLING)
Short-to-ground comparator
falling threshold
V
BUS_CON
Set V
BUS_SYS
= 5 V; V
IN
= 3.3 V; EN = 0 V;
Decrease V
BUS_CON
voltage from 5 V until the
device transitions from the overcurrent to short-
circuit mode of operation
2.4 2.5 2.6 V
V
SHRT(HYST)
Short-to-ground comparator
hysteresis
V
BUS_CON
Difference between V
SHRT(RISING)
and
V
SHRT(FALLING)
100 125 150 mV
I
SHRT
Short-to-ground current
source
V
BUS_CON
Current sourced from V
BUS_SYS
when device is
in short-circuit mode
150 350 mA
OVP CIRCUIT—VD+/VD–
V
OVP(RISING)
Input overvoltage protection
threshold
VD+/VD–
Increase VD+ or VD– (with D+ and D–) from
3.3 V to 4.5 V. Measure the value at which FLT
is asserted
V
IN
+
0.6
V
IN
+
0.8
V
IN
+ 1 V
V
HYS(OVP)
Hysteresis on OVP
VD+/VD–
Difference between rising and falling OVP
thresholds on VD+/VD–
50 mV
V
OVP(FALLING)
Input overvoltage protection
threshold
VD+/VD–
Decrease VD+ or VD– (with D+ or D–) from
4.5 V to 2 V. Measure the value at FLT is
deasserted
V
IN
+
0.525
V
IN
+
0.75
V
IN
+
0.975
V
SHORT-TO-BATTERY
V
(VBUS_STB)
V
BUS
hotplug short-to-battery
tolerance
V
BUS_CON
Charge battery-equivalent capacitor to test
voltage then discharge to pin under test
through a 1-meter, 18-gauge wire. (See 图 7-1
for more details)
18 V
V
(DATA_STB)
Data line hotplug short-to-
battery tolerance
VD+/VD–
18 V
DATA LINE SWITCHES—VD+ to D+ or VD–to D–
C
ON
Equivalent on capacitance
Capacitance of D+/D– switches when enabled
- measure on connector side across bias
voltage 0 V to 0.4 V
6.2 pF
R
ON
On resistance
Measure resistance between D+ and VD+ or
D– and VD–, voltage between 0 and 0.4 V
4 6.5
Ω
R
ON(Flat)
On resistance flatness
Measure resistance between D+ and VD+ or
D– and VD–, sweep voltage between 0 V and
0.4 V
0.2 1
Ω
TPD3S714-Q1
ZHCSEZ9C – JANUARY 2016 – REVISED AUGUST 2020
www.ti.com.cn
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