6.7 Electrical Characteristics (continued)
over operating free-air temperature range, EN = 0 V, V
BUS_SYS
= 5 V, V
IN
= 3.3 V, VD+/VD–/D+/D–/V
BUS_CON
= float (unless
otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
I
LIM
Overcurrent limit V
BUS
Progressively load V
BUS_CON
until device
asserts FLT
550 700 850 mA
OVERTEMPERATURE PROTECTION
T
SD(RISING)
The rising overtemperature protection shutdown
threshold
V
BUS_SYS
= 5 V, EN = 0 V, No Load on
V
BUS_CON
, T
A
stepped up until FLT is asserted
150 165 180
℃
T
SD(FALLING)
The falling overtemperature protection shutdown
threshold
V
BUS_SYS
= 5 V, EN = 0 V, No Load on
V
BUS_CON
, T
A
stepped down from T
SD(RISING)
until
FLT is deasserted
125 130 140
℃
T
SD(HYST)
The overtemperature protection shutdown
threshold hysteresis
T
SD(RISING)
– T
SD(FALLING)
10 35 55
℃
OVP CIRCUIT—V
BUS
V
OVP(RISING)
Input overvoltage protection
threshold
V
BUS_CON
Increase V
BUS_CON
from 5 V to 7 V. Measure
when FLT is asserted
5.4 5.6 5.8 V
V
HYS(OVP)
Hysteresis on OVP V
BUS_CON
Difference between rising and falling OVP
thresholds on V
BUS_CON
50 mV
T
OVP(FALLING)
Input overvoltage protection
threshold
V
BUS_CON
Decrease V
BUS_CON
from 7 V to 5 V. Measure
when FLT is deasserted
5.36 5.74 V
V
UVLO(SYS_RISING)
Undervoltage lockout rising for
V
BUS_SYS
V
BUS_SYS
V
BUS_SYS
voltage rising from 0 V to 5 V 3.1 3.3 3.6 V
V
HYS(UVLO_SYS)
V
BUS_SYS
UVLO hysteresis V
BUS_SYS
Difference between rising and falling UVLO
thresholds on V
BUS_SYS
50 75 100 mV
V
UVLO(SYS_FALLING)
Undervoltage lockout falling
for V
BUS_SYS
V
BUS_SYS
V
BUS_SYS
voltage falling from 7 V to 3 V 3 3.2 3.5 V
V
SHRT(RISING)
Short-to-ground comparator
rising threshold
V
BUS_CON
Increase V
BUS_CON
voltage from 0 V until the
device transitions from the short-circuit to over-
current mode of operation
2.5 2.6 2.7 V
V
SHRT(FALLING)
Short-to-ground comparator
falling threshold
V
BUS_CON
Set V
BUS_SYS
= 5 V; V
IN
= 3.3 V; EN = 0 V;
Decrease V
BUS_CON
voltage from 5 V until the
device transitions from the overcurrent to short-
circuit mode of operation
2.4 2.5 2.6 V
V
SHRT(HYST)
Short-to-ground comparator
hysteresis
V
BUS_CON
Difference between V
SHRT(RISING)
and
V
SHRT(FALLING)
100 125 150 mV
I
SHRT
Short-to-ground current
source
V
BUS_CON
Current sourced from V
BUS_SYS
when device is
in short-circuit mode
150 350 mA
OVP CIRCUIT—VD+/VD–
V
OVP(RISING)
Input overvoltage protection
threshold
VD+/VD–
Increase VD+ or VD– (with D+ and D–) from
3.3 V to 4.5 V. Measure the value at which FLT
is asserted
V
IN
+
0.6
V
IN
+
0.8
V
IN
+ 1 V
V
HYS(OVP)
Hysteresis on OVP
VD+/VD–
Difference between rising and falling OVP
thresholds on VD+/VD–
50 mV
V
OVP(FALLING)
Input overvoltage protection
threshold
VD+/VD–
Decrease VD+ or VD– (with D+ or D–) from
4.5 V to 2 V. Measure the value at FLT is
deasserted
V
IN
+
0.525
V
IN
+
0.75
V
IN
+
0.975
V
SHORT-TO-BATTERY
V
(VBUS_STB)
V
BUS
hotplug short-to-battery
tolerance
V
BUS_CON
Charge battery-equivalent capacitor to test
voltage then discharge to pin under test
through a 1-meter, 18-gauge wire. (See 图 7-1
for more details)
18 V
V
(DATA_STB)
Data line hotplug short-to-
battery tolerance
VD+/VD–
18 V
DATA LINE SWITCHES—VD+ to D+ or VD–to D–
C
ON
Equivalent on capacitance
Capacitance of D+/D– switches when enabled
- measure on connector side across bias
voltage 0 V to 0.4 V
6.2 pF
R
ON
On resistance
Measure resistance between D+ and VD+ or
D– and VD–, voltage between 0 and 0.4 V
4 6.5
Ω
R
ON(Flat)
On resistance flatness
Measure resistance between D+ and VD+ or
D– and VD–, sweep voltage between 0 V and
0.4 V
0.2 1
Ω
TPD3S714-Q1
ZHCSEZ9C – JANUARY 2016 – REVISED AUGUST 2020
www.ti.com.cn
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