Revision 3.0
March 2007
K1B6416B2D
- 4 -
UtRAM
ABSOLUTE MAXIMUM RATINGS
1) Stresses greater than "Absolute Maximum Ratings" may cause permanent damage to the device. Functional operation should be restricted to be
used under recommended operating condition. Exposure to absolute maximum rating conditions longer than 1 second may affect reliability.
RECOMMENDED DC OPERATING CONDITIONS
1. TA=-40 to 85°C, otherwise specified.
2. Overshoot: V
CCQ +1.0V in case of pulse width ≤20ns. Overshoot is sampled, not 100% tested.
3. Undershoot: -1.0V in case of pulse width ≤20ns. Undershoot is sampled, not 100% tested.
CAPACITANCE (f=1MHz, TA=25°C)
DC AND OPERATING CHARACTERISTICS
1. ISB1 is measured after 60ms after CS high. CLK should be fixed at high or at Low.
2. Full Array Partial Refresh Current(I
SBP) is same as Standby Current(ISB1).
3. Internal TCSR (Temperature Compensated Self Refresh) is used to optimize refresh cycle below 40°C.
4. I
IO=0mA; This parameter is specified with the outputs disabled to avoid external loading effects.
5. V
IN=0V; all inputs should not be toggle.
6. Clock should not be inserted between ADV
low and WE low during Write operation.
Item Symbol Ratings Unit
Voltage on any pin relative to Vss
VIN, VOUT
-0.2 to VCCQ+0.3V V
Power supply voltage relative to Vss
VCC, VCCQ
-0.2 to 2.5V
V
Power Dissipation
PD
1.0 W
Storage temperature
TSTG
-65 to 150 °C
Operating Temperature
TA
-40 to 85 °C
Item Symbol Min Typ Max Unit
Power supply voltage(Core) VCC 1.7 1.8 1.95 V
Power supply voltage(I/O) V
CCQ 1.7 1.8 1.95 V
Ground V
SS, VSSQ 00 0V
Input high voltage
VIH
VCCQ-0.4 -
V
CCQ+0.2
2)
V
Input low voltage
VIL
-0.2
3)
-0.4V
Item Symbol Test Condition Min Max Unit
Input capacitance C
IN VIN=0V - 8 pF
Input/Output capacitance C
IO VIO=0V - 8 pF
Item Symbol Test Conditions Min Typ Max Unit
Input Leakage Current I
LI VIN=VSS to VCCQ -1 - 1 µA
Output Leakage Current I
LO CS=VIH, PS=VIH, OE=VIH or WE=VIL, VIO=Vss to VCCQ -1 - 1 µA
Average Operating
Current(Async)
I
CC2
Cycle time=70ns, IIO=0mA
4)
, 100% duty, CS=VIL, PS=VIH, VIN=VIL or VIH
--40mA
I
CC2P
Cycle time=tRC+3tPC, IIO=0mA
4)
, 100% duty, CS=VIL, PS=VIH, VIN=VIL or
V
IH
--40mA
Average Operating
Current(Sync)
I
CC3
Burst Length 4, Latency 5, 104MHz, IIO=0mA
4)
, Address transition 1 time,
CS
=VIL, PS=VIH, VIN=VIL or VIH
--40mA
Output Low Voltage V
OL IOL=0.2mA - - 0.2 V
Output High Voltage V
OH IOH=-0.2mA 1.4 - - V
Standby Current(CMOS)
I
SB1
1)
CS≥VCCQ-0.2V, PS≥VCCQ-0.2V, Other inputs=Vss
or V
CCQ (Toggle is not allowed)
5)
< 40°C - - 120 µA
< 85°C - - 180 µA
Partial Refresh Current
I
SBP
2)
PS≤0.2V, CS≥VCCQ-0.2V, Other inputs=Vss or
V
CCQ (Toggle is not allowed)
5)
< 40°C
1/2 Block - - 115
µA
1/4 Block - - 110
< 85°C
1/2 Block - - 165
µA
1/4 Block - - 155
Deep Power Down Current I
SBD
PS≤0.2V, CS≥VCCQ-0.2V, Other inputs=Vss or
VCCQ (Toggle is not allowed)
5)
< 85°C--30µA
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