TMC5160高功率步进电机控制驱动芯片数据手册

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TMC5160数据手册是关于高功率步进电机控制驱动芯片的详细介绍。该芯片具有串行通信接口，能够实现自动目标定位的灵活斜坡发生器和业界最先进的步进电机驱动器结合在一起。通过外置外部晶体管，实现高动态、高扭矩电机驱动。知识点1：步进电机控制驱动芯片 * TMC5160是一种高功率步进电机控制驱动芯片，具有串行通信接口。 * 该芯片能够实现自动目标定位的灵活斜坡发生器和业界最先进的步进电机驱动器结合在一起。知识点2：步进电机驱动技术 * TMC5160采用外置外部晶体管，实现高动态、高扭矩电机驱动。 * 该技术能够提高步进电机的驱动性能，实现高扭矩和高动态的电机驱动。知识点3：Motion Controller技术 * TMC5160具有Motion Controller技术，能够实现自动目标定位的灵活斜坡发生器和业界最先进的步进电机驱动器结合在一起。 * 该技术能够提高步进电机的驱动性能，实现高精度和高灵活性的电机驱动。知识点4：Step/Dir Interface技术 * TMC5160具有Step/Dir Interface技术，能够实现步进电机的精准控制。 * 该技术能够提高步进电机的驱动性能，实现高精度和高灵活性的电机驱动。知识点5：MicroPlyer技术 * TMC5160具有MicroPlyer技术，能够实现步进电机的微步进控制。 * 该技术能够提高步进电机的驱动性能，实现高精度和高灵活性的电机驱动。知识点6：Encoder Interface技术 * TMC5160具有Encoder Interface技术，能够实现步进电机的编码器接口。 * 该技术能够提高步进电机的驱动性能，实现高精度和高灵活性的电机驱动。知识点7：Resonance Dampening技术 * TMC5160具有Resonance Dampening技术，能够实现步进电机的共振抑制。 * 该技术能够提高步进电机的驱动性能，实现高精度和高灵活性的电机驱动。知识点8：Stealth Chope技术 * TMC5160具有Stealth Chope技术，能够实现步进电机的无声运行。 * 该技术能够提高步进电机的驱动性能，实现高精度和高灵活性的电机驱动。知识点9：SpreadCycle技术 * TMC5160具有SpreadCycle技术，能够实现步进电机的高动态控制。 * 该技术能够提高步进电机的驱动性能，实现高精度和高灵活性的电机驱动。知识点10：DcStep技术 * TMC5160具有DcStep技术，能够实现步进电机的直流电压控制。 * 该技术能够提高步进电机的驱动性能，实现高精度和高灵活性的电机驱动。知识点11：StallGuard2技术 * TMC5160具有StallGuard2技术，能够实现步进电机的高精度无感知负载检测。 * 该技术能够提高步进电机的驱动性能，实现高精度和高灵活性的电机驱动。知识点12：CoolStep技术 * TMC5160具有CoolStep技术，能够实现步进电机的能效控制。 * 该技术能够提高步进电机的驱动性能，实现高精度和高灵活性的电机驱动。知识点13：应用场景 * TMC5160广泛应用于工业自动化、机器人、医疗、办公自动化、监控系统等领域。 * 该芯片能够满足各种应用场景的需求，实现高精度和高灵活性的电机驱动。

TMC5160/TMC5160A DATASHEET (Rev. 1.17 / 2022-MAY-25) 16

www.trinamic.com

Attention

In case VSA is supplied by a different voltage source, make sure that VSA does not drop out during

motor operation. The motor driver should be disabled in case VSA becomes switched off before VS.

Hard switching edges on VSA might result in bridge cross-conduction otherwise. It is safest to derive

VSA voltage from VS supply.

Attention

In addition to filtering capacity near to the power bridges, provide sufficient capacity on VS located

close to the VS pin and the connection of the VCP capacitor, to ensure that high-frequency ripple,

caused by the switching edges of the power bridge transistors are kept well below 0.5V. Keep power

slopes below 1V/µs. Failure to do so could result in destructive currents via the charge pump circuit.

Provide overvoltage protection in case the motor could be manually turned at a high velocity, or in

case the driver could become cut off from the main supply capacitors. Significant energy can be fed

back from motor coils to the power supply in the event of quick deceleration, or when the driver

becomes disabled.

3.2 External Gate Voltage Regulator

At high supply voltages like 48V, the internal gate voltage regulator and the internal 5V regulator

have considerable power dissipation, especially with high MOSFET gate charges, high chopper

frequency or high system clock frequency >12MHz. A good thermal coupling of the heat slug to the

system PCB GND plane is required to dissipate heat. Still, the thermal thresholds will be lowered

significantly by self-heating. To reduce power dissipation, supply an external gate driver voltage to the

TMC5160. Figure 3.2 shows the required connection. The internal gate voltage regulator becomes

disabled in this constellation. 12V +/-1V are recommended for best results.

5V Voltage

regulator

5VOUT

VSA

2.2µ

VCC

2.2µ

12V Gate Voltage

2R2

470n

11.5V Voltage

regulator

12VOUT

Figure 3.2 External gate voltage supply

Hint

With MOSFETs above 50nC of total gate charge, chopper frequency >40kHz, or at clock frequency

>12MHz, it is recommended to use a VSA supply not higher than 40V.

TMC5160/TMC5160A DATASHEET (Rev. 1.17 / 2022-MAY-25) 17

www.trinamic.com

3.3 Choosing MOSFETs and Slope

The selection of power MOSFETs depends on several factors, like package size, on-resistance, voltage

rating and supplier. It is not true, that larger, lower RDSon MOSFETs will always be better, as a larger

device also has higher capacitances and may add more ringing in trace inductance and power

dissipation in the gate drive circuitry. Adapt the MOSFETs to the required motor voltage (adding 5-10V

of reserve to the peak supply voltage) and to the desired maximum current, in a way that resistive

power dissipation still is low for the thermal capabilities of the chosen MOSFET package. The TMC5160

drives the MOSFET gates with roughly 10V, so normal, 10V specified types are sufficient. Logic level

FETs (4.5V specified RDSon) will also work, but may be more critical with regard to bridge cross-

conduction due to lower V

GS(th)

The gate drive current and MOSFET gate resistors R

(optional) determine switching behavior and

should basically be adapted to the MOSFET gate-drain charge (Miller charge). Figure 3.3 shows the

influence of the Miller charge on the switching event. Figure 3.4 additionally shows the switching

events in different load situations (load pulling the output up or down), and the required bridge

brake-before-make time.

The following table shall serve as a thumb rule for programming the MOSFET driver current

(DRVSTRENGTH setting) and the selection of gate resistors:

MOSFET MILLER CHARGE VS. DRVSTRENGTH AND R

Miller Charge

[nC] (typ.)

DRVSTRENGTH

setting

Value of R

[Ω]

<10

≤ 15

10…20

0 or 1

≤ 10

20…40

1 or 2

≤ 7.5

40…60

2 or 3

≤ 5

>60

≤ 2.7

The TMC5160 provides increased gate-off drive current to avoid bridge cross-conduction induced by

high dV/dt. This protection will be less efficient with gate resistors exceeding the values given in the

table. Therefore, for larger values of R

, a parallel diode may be required to ensure keeping the

MOSFET safely off during switching events.

MOSFET gate charge vs. switching event

– Total gate charge (nC)

– Gate to source voltage (V)

0 5 10 15 20 25

– Drain to source voltage (V)

MILLER

Figure 3.3 Miller charge determines switching slope

Hints

- Choose modern MOSFETs with fast and soft recovery bulk diode and low reverse recovery charge.

- A small, SMD MOSFET package allows compacter routing and reduces parasitic inductance effects.

TMC5160/TMC5160A DATASHEET (Rev. 1.17 / 2022-MAY-25) 18

www.trinamic.com

MOSFET drivers

BMx

12VOUT

Load pulling BMx down Load pulling BMx up

BBM

Miller plateau

Hx-

BMx

-V

BMx

Miller plateau

Effective break-before-make time

-1.2V

Output

slope

Output

slope

BBM

Figure 3.4 Slopes, Miller plateau and blank time

The following DRV_CONF parameters allow adapting the driver to the MOSFET bridge:

Parameter

Description

Setting

Comment

BBMTIME

Break-before-make time setting to ensure non-

overlapping switching of high-side and low-side

MOSFETs. BBMTIME allows fine tuning of times in

increments shorter than a clock period.

For higher times, use BBMCLKS.

0…24

time[ns]

100ns*32/(32-BBMTIME)

Ensure ~30% headroom

Reset Default: 0

BBMCLKS

Like BBMTIME, but in multiple of a clock cycle.

The longer setting rules (BBMTIME vs. BBMCLKS).

0…15

0: off

Reset Default: OTP 4 or 2

DRV

STRENGTH

Selection of gate driver current. Adapts the gate

driver current to the gate charge of the external

MOSFETs.

0…3

Reset Default = 0

FILT_ISENSE

Filter time constant of sense amplifier to suppress

ringing and coupling from second coil operation

Hint: Increase setting if motor chopper noise

occurs due to cross-coupling of both coils.

(Reset Default = %00)

0…3

00: ~100ns (reset default)

01: ~200ns

10: ~300ns

11: ~400ns

DRV_CONF Parameters

Use the lowest gate driver strength setting DRVSTRENGTH giving favorable switching slopes, before

increasing the value of the gate series resistors. A slope time of nominal 40ns to 80ns is sufficient

and will normally be covered by the shortest possible Break-Before-Make time setting (BBMTIME=0,

BBMCLKS=0).

In case slower slopes have to be used, e.g., with large MOSFETs, ensure that the break-before-make

time (BBMTIME, optionally use BBMCLKS for times >200ns) sufficiently covers the switching event, in

order to avoid bridge cross conduction. The shortest break-before-make time, safely covering the

switching event, gives best results. Add roughly 30% of reserve, to cover production stray of MOSFETs

and driver.

TMC5160/TMC5160A DATASHEET (Rev. 1.17 / 2022-MAY-25) 19

www.trinamic.com

3.4 Tuning the MOSFET Bridge

A clean switching event is favorable to ensure low power dissipation and good EMC behavior.

Unsuitable layout or components endanger stable operation of the circuit. Therefore, it is important to

understand the effect of parasitic trace inductivity and MOSFET body diode reverse recovery.

Stray inductance in power routing will cause ringing whenever the opposite MOSFET is in diode

conduction prior to switching on a low-side or high-side MOSFET. Diode conduction occurs during

break-before make time while the load current is inverse to the following bridge polarity. The MOSFET

bulk diode has a certain, type specific reverse recovery time and charge. This time typically is in the

range of a few 10ns. During reverse recovery time, the bulk diode will cause high current flow across

the bridge. This current is taken from the power supply filter capacitors (see thick lines Figure 3.5).

Once the diode opens, parasitic inductance tries to keep the current flowing. A high, fast slope results

and leads to ringing in parasitic inductivities (see Figure 3.6) in the current path. This may lead to

bridge voltage undershooting the GND level as well as short pulses on VS and all MOSFET

connections. It must be ensured, that the driver IC does not see spikes on its BM pins undershooting

GND more than 5V. Severe VS ripple might overload the charge-pump circuitry. Measure the voltage

directly at the driver pins to driver GND. The amount of undershooting depends on energy stored in

parasitic inductivities from low side drain to low side source and via the sense resistor RS to GND.

When using relatively small MOSFETs, a soft slope control requires a high gate series resistance. This

endangers safe MOSFET switch off. Add additional diodes to ensure safe MOSFET off conditions in this

case (shown for right MOSFET pair in Figure 3.5).

Figure 3.7 shows performance of the basic circuit after adapting switching slope and adding 1nF

bridge output capacitors.

GNDD

GNDA

DIE PAD

BMA2

SRAH

Capacitor reduces

ringing on sense resistor.

SRAL

LA1

LA2

HA1

HA2

BMA1

CA1

CA2

Coil

out

47R



Decide use and value of the additional components based on measurements of the actual circuit using the final layout!

100n

1n,

100V

1n,

100V

2n2

RC-Filter protects SRAH /

SRAL and reduces spikes

seen by the chopper

: Reduce slope and protect the driver against ringing in the

interconnections between MOSFET and driver

220nF

Optional RC filter (R 1 to

4.7Ohm) to protect against VS

ringing

4.7µF

LOW-

ESR

Additional 1A type Schottky Diodes (selected for full VM range) in combination with R

to 1.0 Ohm) eliminate

undershooting of BM in case of high parasitic layout inductivity, e.g. with long interconnections to MOSFETs.

470pF to a few nF output

capacitors close to bridge

and / or output reduce

ringing and improve EMC

Filter capacitors placed near bridge

Optional gate diodes in combination

with very high value of R

VCP

100n

Figure 3.5 Bridge protection options for power routing inductivity

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TMC5160高功率步进电机控制驱动芯片数据手册

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