6.4 Recommended Operating Conditions
MIN MAX UNIT
V
CC
5-V Bus Supply Voltage Range 4.5 5.5
V
V
IO
I/O Level-Shifting Voltage Range 2.8 5.5
I
OH(RXD)
RXD terminal HIGH level output current
–2
mA
I
OL(RXD)
RXD terminal LOW level output current 2
6.5 Thermal Information
Thermal Metric
(1)
TEST CONDITIONS
TCAN1051-Q1
D (SOIC) DRB (VSON)
Unit
8 Pins 8 Pins
R
θJA
Junction-to-air thermal resistance High-K thermal resistance 105.8 40.2 °C/W
R
θJB
Junction-to-board thermal resistance 46.8 49.7 °C/W
R
θJC(TOP)
Junction-to-case (top) thermal resistance 48.3 15.7 °C/W
Ψ
JT
Junction-to-top characterization parameter 8.7 0.6 °C/W
Ψ
JB
Junction-to-board characterization
parameter
46.2 15.9 °C/W
T
TSD
Thermal shutdown temperature 170 170 °C
T
TSD_HYS
Thermal shutdown hysteresis 5 5 °C
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
6.6 Power Rating
PARAMETER TEST CONDITIONS POWER DISSIPATION UNIT
P
D
Average power dissipation
V
CC
= 5 V, V
IO
= 5 V (if applicable), T
J
= 27°C, R
L
= 60 Ω, S at 0
V, Input to TXD at 250 kHz, C
L_RXD
= 15 pF. Typical CAN
operating conditions at 500 kbps with 25% transmission
(dominant) rate.
52 mW
V
CC
= 5.5 V, V
IO
= 5.5 V (if applicable), T
J
= 150°C, R
L
= 50 Ω, S
at 0 V, Input to TXD at 500 kHz, C
L_RXD
= 15 pF. Typical high
load CAN operating conditions at 1 Mbps with 50% transmission
(dominant) rate and loaded network.
124 mW
TCAN1051-Q1, TCAN1051V-Q1, TCAN1051H-Q1, TCAN1051HV-Q1
TCAN1051G-Q1, TCAN1051GV-Q1, TCAN1051HG-Q1, TCAN1051HGV-Q1
ZHCSGC4D – MARCH 2016 – REVISED APRIL 2021
www.ti.com.cn
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TCAN1051GV-Q1 TCAN1051HG-Q1 TCAN1051HGV-Q1
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