生长温度与退火影响Ge995Sn0.005外延层的应变与表面特性
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本研究聚焦于"生长和退火温度对Ge995Sn0.005外延层的应变和表面形态的影响"，这是针对低锡含量（0.5%）的Ge1-xSnx合金在IT领域的一项关键研究。作者通过分子束外延技术在Si（1 0 0）基底上进行生长，探索了不同生长温度（TG）对合金性能的影响。实验范围从220°C到500°C，发现随着TG的提高，合金沉积过程中的表面粗糙度显著增强，这可能是由于较高的温度导致晶体生长速率改变或界面缺陷的增多。
在低温生长阶段，合金表现出压缩的残留应变，随着TG上升，这种应变逐渐释放，转变为拉伸面内应变。当TG超过420°C时，这种转变尤为明显，这在半导体器件设计和制造中可能会影响材料的性能和稳定性。同时，这表明在优化工艺参数时，应谨慎控制生长温度，以避免过高的温度引发的不良影响。
另外，研究还探讨了退火温度（TA）对表面形态和残留应变的影响。在TA≤600°C时，合金的表面形貌和微小瑕疵变化不大，表明此温度范围内退火有助于稳定外延层。然而，当TA进一步提升，表面粗糙度明显增加，且残留的异质外延应变基本被释放，这提示过高退火温度可能会破坏外延层的均匀性和完整性。
这项研究揭示了生长和退火温度在Ge995Sn0.005合金外延层制备过程中的关键作用，对于理解合金的生长行为、优化外延层质量以及控制其在实际应用中的性能至关重要。这些发现对于半导体工业来说，尤其是在GeSn材料的研究与开发中，提供了宝贵的数据指导。
Applied
Surface
Science
340
(2015)
132–137
Contents
lists
available
at
ScienceDirect
Applied
Surface
Science
journal
h
om
epa
ge:
www.elsevier.com/locate/apsusc
Influence
of
growth
and
annealing
temperature
on
the
strain
and
surface
morphology
of
Ge
995
Sn
0.005
epilayer
Shaojian
Su
a,∗
,
Dongliang
Zhang
b
,
Chunlai
Xue
b
,
Buwen
Cheng
b,∗∗
a
Fujian
Provincial
Key
Laboratory
of
Light
Propagation
and
Transformation,
College
of
Information
Science
and
Engineering,
Huaqiao
University,
Xiamen
City
361021,
Fujian
Province,
China
b
State
Key
Laboratory
on
Integrated
Optoelectronics,
Institute
of
Semiconductors,
Chinese
Academy
of
Sciences,
P.O.
Box
912,
Beijing
100083,
China
a
r
t
i
c
l
e
i
n
f
o
Article
history:
Received
16
November
2014
Received
in
revised
form
25
February
2015
Accepted
26
February
2015
Available
online
5
March
2015
Keywords:
Germanium
tin
Germanium
Surface
morphology
Strain
a
b
s
t
r
a
c
t
Ge
1−x
Sn
x
alloys
with
low
tin
composition
(0.5%)
were
grown
directly
on
Si
(1
0
0)
substrates
by
molecular
beam
epitaxy
at
various
temperatures
ranging
from
220
◦
C
to
500
◦
C.
In
situ
RHEED
patterns,
AFM
images,
and
HR-XRD
curves
were
measured
to
investigate
the
surface
morphology
and
strain
of
the
Ge
0.995
Sn
0.005
alloys.
Surface
roughening,
which
occurred
during
the
deposition
of
the
alloy,
was
found
to
be
enhanced
with
the
increase
of
the
growth
temperature
T
G
.
Compressive
residual
strain
was
introduced
during
low-
temperature
heteroepitaxial
growth
of
the
alloy.
As
T
G
was
increased,
it
was
gradually
released,
while
the
tensile
thermal
strain
was
increased.
As
a
result,
tensile
in-plane
strain
was
obtained
provided
T
G
was
high
enough
(>420
◦
C).
The
influence
of
annealing
temperature
T
A
was
investigated
as
well.
It
was
shown
that
both
surface
morphology
and
stain
of
the
alloy
were
only
slightly
changed
with
T
A
≤
600
◦
C.
If
T
A
was
further
increased,
the
surface
roughness
was
significantly
increased
and
the
residual
heteroepitaxial
strain
substantially
released.
©
2015
Elsevier
B.V.
All
rights
reserved.
1.
Introduction
Ge
1-x
Sn
x
alloy
has
attracted
growing
attention
recently
due
to
its
novel
electronic
band
structure
for
potential
application
in
Si-
based
optoelectronics
[1].
Ge
is
a
quasi-direct
band-gap
group
IV
semiconductor,
for
its
conduction
band
minimum
point
is
situ-
ated
only
136
meV
above
the
L
point.
The
incorporation
of
Sn
into
Ge
will
lower
the
discrepancy
between
the
and
L
valleys,
and
turn
the
alloy
into
direct
band-gap
as
long
as
Sn
concentration
is
6%
or
higher
[2,3].
Hence,
Ge
1−x
Sn
x
alloy
is
a
promising
material
for
high
efficient
light
emitting
devices
(LEDs)
and
even
laser
for
silicon
photonics
[1–4].
However,
it
is
difficult
to
grow
Ge
1−x
Sn
x
alloy
[5–13].
Firstly,
the
maximum
equilibrium
solid
solubility
of
␣-Sn
in
Ge
is
less
than
1%.
Secondly,
Sn
tends
to
segregate
to
the
surface,
since
Sn
is
a
very
large
solute
atom
in
the
Ge
lattice
and
the
surface
energy
of
Sn
is
lower
than
that
of
Ge.
Thirdly,
there
is
a
large
lattice
mismatch
(14.7%)
between
␣-Sn
and
Ge.
Despite
these
dif-
ficulties,
high-quality
Ge
1−x
Sn
x
alloy
has
been
grown
by
molecular
beam
epitaxy
(MBE)
[5–10]
and
chemical
vapor
deposition
(CVD)
∗
Corresponding
author.
Tel.:
+86
592
6162380.
∗∗
Corresponding
author.
Tel.:
+86
10
82304762.
E-mail
addresses:
sushaojian@hqu.edu.cn
(S.
Su),
cbw@semi.ac.cn
(B.
Cheng).
[11–13].
Devices,
such
as
LEDs
[14–16]
and
photodetectors
[17–22],
have
also
been
successfully
fabricated.
Much
attention
has
been
focused
on
the
alloy
with
high
Sn
com-
position,
especially
that
owning
a
direct
band-gap.
Nevertheless,
the
alloy
with
Sn
concentration
less
than
the
maximum
equilib-
rium
solid
solubility
is
important
as
well.
Werner
et
al.
[17]
reported
that
the
optical
responsivity
at
1550
nm
of
the
alloy
with
a
Sn
con-
tent
of
0.5%
is
increased
by
factor
of
3
in
comparison
with
pure
Ge.
Kouvetakis
et
al.
[21,22]
also
showed
that
Sn
concentration
in
the
10
19
–10
20
cm
−3
range
was
sufficient
to
largely
increase
the
responsivity
of
detectors
operating
at
1550
nm.
In
this
work,
we
grow
Ge
1−x
Sn
x
alloy
with
only
0.5%
of
Sn,
which
is
within
the
max-
imum
equilibrium
solid
solubility
of
Sn
in
Ge.
We
will
show
that
the
growth
mechanism
is
quite
different
from
that
of
pure
Ge.
Besides,
the
influence
of
growth
temperature
T
G
and
annealing
tempera-
ture
T
A
on
the
surface
morphology
and
strain
of
the
alloy
will
be
presented
and
discussed.
2.
Experimental
The
samples
were
grown
in
a
user-designed
MBE
system
[6,19]
with
a
base
pressure
of
3.0
×
10
−8
Pa.
Ge
and
Sn
atoms/molecular,
both
99.9999%
pure,
were
evaporated
from
separate
pyrolytic
boron
nitride
(BN)
effusion
cells.
With
a
desired
Sn
composition
of
0.53%,
the
deposition
rate
of
Ge
was
maintained
at
1.5
nm/min
http://dx.doi.org/10.1016/j.apsusc.2015.02.178
0169-4332/©
2015
Elsevier
B.V.
All
rights
reserved.
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