Micron DDR4 SDRAM规格与特性详解

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" Micron DDR4协议是针对汽车应用的高性能DRAM内存规格，主要特点是低电压操作、高效率的刷新机制和多种节能功能。" Micron DDR4 SDRAM，如MT40A1G8和MT40A512M16型号，是专门为汽车电子设计的内存解决方案。该协议在电源管理方面表现出色，其核心电压VDD和数据线电压VDDQ均为1.2V，允许±60mV的偏差，而辅助电源VPP为2.5V，有±250mV的变动范围。这种低电压设计有助于降低功耗，提高系统整体能效。 DDR4内存的一大改进是内置了内部可调的VREFDQ生成器，用于提供数据线的参考电压，确保信号质量。采用1.2V的伪开漏I/O技术，进一步优化了信号传输效率。内存模块具有严格的刷新机制，根据温度变化调整刷新周期，例如在-40°C至85°C的温度范围内，刷新时间为8192个周期或64ms。内存架构方面，Micron DDR4支持16个内部银行（对于x8配置）或8个内部银行（对于x16配置），每个组包含4个银行，这增强了并发访问能力，提升了数据吞吐量。8n位预取架构提高了带宽，减少了读写延迟。此外，数据 strobe 前导训练、命令/地址延迟（CAL）和写级别调整等特性，确保了数据传输的精确性和可靠性。为了节省能源，Micron DDR4提供了自我刷新模式、低功耗自我刷新（LPASR）以及温度控制刷新（TCR）。精细粒度刷新、自我刷新中断等功能进一步优化了功耗管理。输出驱动校准、无源和动态开路终端（ODT）技术则改善了信号完整性，减少了干扰。安全性和错误检测是关键部分，DDR4协议包括数据总线反转（DBI）、命令/地址（CA）奇偶校验和数据总线写循环冗余检查（CRC），提高了数据传输的准确性。每个DRAM的地址可寻址性允许独立的故障检测和修复。连接性测试功能确保了内存条与系统之间的兼容性和可靠性。此外，Micron DDR4内存遵循JEDEC JESD-79-4标准，支持sPPR和hPPR功能，Die Revision R还支持内置自动测试（MBIST）和PPR（错误修复）功能，符合AEC-Q100汽车级可靠性标准。这些特性确保了在严苛环境下的稳定性和耐用性，使得Micron DDR4内存成为汽车电子系统的理想选择。

Table 107: Cross Point Voltage For Differential Input Signals DQS.............................................................................254

Table 108: DQS Differential Input Slew Rate Definition.............................................................................................. 254

Table 109: DDR4-1600 through DDR4-2400 Differential Input Slew Rate and Input Levels for DQS_t, DQS_c.....255

Table 110: DDR4-2666 through DDR4-3200 Differential Input Slew Rate and Input Levels for DQS_t, DQS_c.....255

Table 111: ADDR, CMD, CNTL Overshoot and Undershoot/Specifications..............................................................257

Table 112: CK Overshoot and Undershoot/ Specifications......................................................................................... 257

Table 113: Data, Strobe, and Mask Overshoot and Undershoot/ Specifications.......................................................258

Table 114: Single-Ended Output Levels.........................................................................................................................259

Table 115: Single-Ended Output Slew Rate Definition................................................................................................ 259

Table 116: Single-Ended Output Slew Rate...................................................................................................................260

Table 117: Differential Output Levels............................................................................................................................260

Table 118: Differential Output Slew Rate Definition.................................................................................................... 260

Table 119: Differential Output Slew Rate...................................................................................................................... 262

Table 120: Connectivity Test Mode Output Levels....................................................................................................... 262

Table 121: Connectivity Test Mode Output Slew Rate..................................................................................................263

Table 122: Output Driver Electrical Characteristics During Connectivity Test Mode...............................................265

Table 123: Strong Mode (34 ohm) Output Driver Electrical Characteristics.............................................................. 266

Table 124: Weak Mode (48 ohm) Output Driver Electrical Characteristics................................................................267

Table 125: Output Driver Sensitivity Definitions..........................................................................................................267

Table 126: Output Driver Voltage and Temperature Sensitivity.................................................................................. 268

Table 127: Alert Driver Voltage.......................................................................................................................................268

Table 128: ODT DC Characteristics............................................................................................................................... 269

Table 129: ODT Sensitivity Definitions......................................................................................................................... 270

Table 130: ODT Voltage and Temperature Sensitivity..................................................................................................270

Table 131: ODT Timing Definitions...............................................................................................................................271

Table 132: Reference Settings for ODT Timing Measurements...................................................................................271

Table 133: DRAM Package Electrical Specifications for x4 and x8 Devices................................................................274

Table 134: DRAM Package Electrical Specifications for x16 Devices..........................................................................275

Table 135: Pad Input/Output Capacitance................................................................................................................... 277

Table 136: Thermal Characteristics............................................................................................................................... 278

Table 137: Basic I

, I

, and I

DDQ

Measurement Conditions.................................................................................... 280

Table 138: I

DD0

and I

PP0

Measurement-Loop Pattern

.................................................................................................284

Table 139: I

DD1

Measurement – Loop Pattern

............................................................................................................. 285

Table 140: I

DD2N

, I

DD3N

, and I

PP3P

Measurement – Loop Pattern

.............................................................................. 286

Table 141: I

DD2NT

Measurement – Loop Pattern

......................................................................................................... 287

Table 142: I

DD4R

Measurement – Loop Pattern

........................................................................................................... 288

Table 143: I

DD4W

Measurement – Loop Pattern

.......................................................................................................... 289

Table 144: I

DD4Wc

Measurement – Loop Pattern

......................................................................................................... 290

Table 145: I

DD5R

Measurement – Loop Pattern

........................................................................................................... 291

Table 146: I

DD7

Measurement – Loop Pattern

............................................................................................................. 292

Table 147: Timings used for I

, I

, and I

DDQ

Measurement – Loop Patterns......................................................... 293

Table 148: I

, I

, and I

DDQ

Current Limits – Rev. B (0°C ≤ T

≤ 95°C)...................................................................... 294

Table 149: I

, I

, and I

DDQ

Current Limits – Rev. B (0°C ≤ T

≤ 105°C).................................................................... 295

Table 150: I

, I

, and I

DDQ

Current Limits – Rev. B (0°C ≤ T

≤ 125°C).................................................................... 297

Table 151: I

, I

, and I

DDQ

Current Limits – Rev. E (0°C ≤ T

≤ 95°C)...................................................................... 298

Table 152: I

, I

, and I

DDQ

Current Limits – Rev. E (0°C ≤ T

≤ 105°C).................................................................... 300

Table 153: I

, I

, and I

DDQ

Current Limits – Rev. E (0°C ≤ T

≤ 125°C).................................................................... 302

Table 154: I

, I

, and I

DDQ

Current Limits; Die Rev. R (–40° ≤ T

≤ 85°C)................................................................303

Table 155: I

, I

, and I

DDQ

Current Limits; Die Rev. R.............................................................................................. 305

Table 156: Backward Compatibility...............................................................................................................................308

Table 157: DDR4-1600 Speed Bins and Operating Conditions................................................................................... 309

Table 158: DDR4-1866 Speed Bins and Operating Conditions................................................................................... 311

Table 159: DDR4-2133 Speed Bins and Operating Conditions................................................................................... 312

Table 160: DDR4-2400 Speed Bins and Operating Conditions................................................................................... 314

8Gb: x8, x16 Automotive DDR4 SDRAM

List of Tables

CCMTD-1406124318-10419

8gb_auto_ddr4_dram.pdf - Rev. K 05/2023 EN

Micron Technology, Inc. reserves the right to change products or specifications without notice.

Important Notes and Warnings

Micron Technology, Inc. ("Micron") reserves the right to make changes to information published in this

document, including without limitation specifications and product descriptions. This document supersedes and

replaces all information supplied prior to the publication hereof. You may not rely on any information set forth in

this document if you obtain the product described herein from any unauthorized distributor or other source not

authorized by Micron.

Automotive Applications. Products are not designed or intended for use in automotive applications unless

specifically designated by Micron as automotive-grade by their respective data sheets. Distributor and customer/

distributor shall assume the sole risk and liability for and shall indemnify and hold Micron harmless against all

claims, costs, damages, and expenses and reasonable attorneys' fees arising out of, directly or indirectly, any

claim of product liability, personal injury, death, or property damage resulting directly or indirectly from any use

of non-automotive-grade products in automotive applications. Customer/distributor shall ensure that the terms

and conditions of sale between customer/distributor and any customer of distributor/customer (1) state that

Micron products are not designed or intended for use in automotive applications unless specifically designated

by Micron as automotive-grade by their respective data sheets and (2) require such customer of distributor/

customer to indemnify and hold Micron harmless against all claims, costs, damages, and expenses and

reasonable attorneys' fees arising out of, directly or indirectly, any claim of product liability, personal injury,

death, or property damage resulting from any use of non-automotive-grade products in automotive applications.

Critical Applications. Products are not authorized for use in applications in which failure of the Micron

component could result, directly or indirectly in death, personal injury, or severe property or environmental

damage ("Critical Applications"). Customer must protect against death, personal injury, and severe property and

environmental damage by incorporating safety design measures into customer's applications to ensure that

failure of the Micron component will not result in such harms. Should customer or distributor purchase, use, or

sell any Micron component for any critical application, customer and distributor shall indemnify and hold

harmless Micron and its subsidiaries, subcontractors, and affiliates and the directors, officers, and employees of

each against all claims, costs, damages, and expenses and reasonable attorneys' fees arising out of, directly or

indirectly, any claim of product liability, personal injury, or death arising in any way out of such critical

application, whether or not Micron or its subsidiaries, subcontractors, or affiliates were negligent in the design,

manufacture, or warning of the Micron product.

Customer Responsibility. Customers are responsible for the design, manufacture, and operation of their systems,

applications, and products using Micron products. ALL SEMICONDUCTOR PRODUCTS HAVE INHERENT

FAILURE RATES AND LIMITED USEFUL LIVES. IT IS THE CUSTOMER'S SOLE RESPONSIBILITY TO

DETERMINE WHETHER THE MICRON PRODUCT IS SUITABLE AND FIT FOR THE CUSTOMER'S SYSTEM,

APPLICATION, OR PRODUCT. Customers must ensure that adequate design, manufacturing, and operating

safeguards are included in customer's applications and products to eliminate the risk that personal injury, death,

or severe property or environmental damages will result from failure of any semiconductor component.

Limited Warranty. In no event shall Micron be liable for any indirect, incidental, punitive, special or

consequential damages (including without limitation lost profits, lost savings, business interruption, costs

related to the removal or replacement of any products or rework charges) whether or not such damages are based

on tort, warranty, breach of contract or other legal theory, unless explicitly stated in a written agreement executed

by Micron's duly authorized representative.

8Gb: x8, x16 Automotive DDR4 SDRAM

Important Notes and Warnings

CCMTD-1406124318-10419

8gb_auto_ddr4_dram.pdf - Rev. K 05/2023 EN

Micron Technology, Inc. reserves the right to change products or specifications without notice.

General Notes and Description

Description

The DDR4 SDRAM is a high-speed dynamic random-access memory internally configured as an

eight-bank DRAM for the x16 configuration and as a 16-bank DRAM for the x8 configurations. The

DDR4 SDRAM uses an 8n-prefetch architecture to achieve high-speed operation. The 8n-prefetch

architecture is combined with an interface designed to transfer two data words per clock cycle at the

I/O pins.

A single READ or WRITE operation for the DDR4 SDRAM consists of a single 8n-bit wide, four-clock

data transfer at the internal DRAM core and two corresponding n-bit wide, one-half-clock-cycle data

transfers at the I/O pins.

Industrial Temperature

An industrial temperature (IT) device option requires that the case temperature not exceed below –

40°C or above 95°C. JEDEC specifications require the refresh rate to double when T

exceeds 85°C; this

also requires use of the high-temperature self refresh option. Additionally, ODT resistance and the

input/output impedance must be derated when operating temperature Tc <0°C.

Automotive Temperature

The automotive temperature (AT) device option requires that the case temperature not exceed below

–40°C or above 105°C. The specifications require the refresh rate to 2X when T

exceeds 85°C; 4X when

exceeds 95°C. Additionally, ODT resistance and the input/output impedance must be derated

when operating temperature Tc <0°C.

Ultra-high Temperature

The ultra-high temperature (UT) device option requires that the case temperature not exceed below –

40°C or above 125°C. The specifications require the refresh rate to 2X when T

exceeds 85°C; 4X when

exceeds 95°C, 8X when T

exceeds 105°C. Additionally, ODT resistance and the input/output

impedance must be derated when operating temperature Tc < 0°C.

General Notes

• The functionality and the timing specifications discussed in this data sheet are for the DLL enable

mode of operation (normal operation), unless specifically stated otherwise.

• Throughout the data sheet, the various figures and text refer to DQs as "DQ." The DQ term is to be

interpreted as any and all DQ collectively, unless specifically stated otherwise.

• The terms "_t" and "_c" are used to represent the true and complement of a differential signal pair.

These terms replace the previously used notation of "#" and/or overbar characters. For example,

differential data strobe pair DQS, DQS# is now referred to as DQS_t, DQS_c.

• The term "_n" is used to represent a signal that is active LOW and replaces the previously used "#"

and/or overbar characters. For example: CS# is now referred to as CS_n.

• The terms "DQS" and "CK" found throughout the data sheet are to be interpreted as DQS_t and

DQS_c, and CK_t and CK_c respectively, unless specifically stated otherwise.

• Complete functionality may be described throughout the entire document; any page or diagram

may have been simplified to convey a topic and may not be inclusive of all requirements.

• Any specific requirement takes precedence over a general statement.

• Any functionality not specifically stated here within is considered undefined, illegal, and not

supported, and can result in unknown operation.

• Addressing is denoted as BG[n] for bank group, BA[n] for bank address, and A[n] for row/column

address.

8Gb: x8, x16 Automotive DDR4 SDRAM

General Notes and Description

CCMTD-1406124318-10419

8gb_auto_ddr4_dram.pdf - Rev. K 05/2023 EN

Micron Technology, Inc. reserves the right to change products or specifications without notice.

• The NOP command is not allowed, except when exiting maximum power savings mode or when

entering gear-down mode, and only a DES command should be used.

• Not all features described within this document may be available on the rev. A (first) version.

• Not all specifications listed are finalized industry standards; best conservative estimates have been

provided when an industry standard has not been finalized.

• Although it is implied throughout the specification, the DRAM must be used after V

has reached

the stable power-on level, which is achieved by toggling CKE at least once every 8192 ×

REFI.

However, in the event CKE is fixed HIGH, toggling CS_n at least once every 8192 ×

REFI is an

acceptable alternative. Placing the DRAM into self refresh mode also alleviates the need to toggle

CKE.

• Not all features designated in the data sheet may be supported by earlier die revisions due to late

definition by JEDEC.

• A x16 device's DQ bus is comprised of two bytes. If only one of the bytes is used, use the lower byte

for data transfers and terminate the upper byte as noted:

- Connect UDQS_t to V

DDQ

or V

/ V

SSQ

via a resistor in the 200Ω range.

- Connect UDQS_c to the opposite rail via a resistor in the same 200Ω range.

- Connect UDM to V

DDQ

via a large (10,000Ω) pull-up resistor.

- Connect UDBI to V

DDQ

via a large (10,000Ω) pull-up resistor.

- Connect DQ [15:8] individually to V

DDQ

via a large (10,000Ω) resistors or float DQ [15:8].

Definitions of the Device-Pin Signal Level

• HIGH: A device pin is driving the logic 1 state.

• LOW: A device pin is driving the logic 0 state.

• High-Z: A device pin is tri-state.

• ODT: A device pin terminates with the ODT setting, which could be terminating or tri-state

depending on the mode register setting.

Definitions of the Bus Signal Level

• HIGH: One device on the bus is HIGH, and all other devices on the bus are either ODT or High-Z.

The voltage level on the bus is nominally V

DDQ

• LOW: One device on the bus is LOW, and all other devices on the bus are either ODT or High-Z. The

voltage level on the bus is nominally V

OL(DC)

if ODT was enabled, or V

SSQ

if High-Z.

• High-Z: All devices on the bus are High-Z. The voltage level on the bus is undefined as the bus is

floating.

• ODT: At least one device on the bus is ODT, and all others are High-Z. The voltage level on the bus is

nominally V

DDQ

8Gb: x8, x16 Automotive DDR4 SDRAM

General Notes and Description

CCMTD-1406124318-10419

8gb_auto_ddr4_dram.pdf - Rev. K 05/2023 EN

Micron Technology, Inc. reserves the right to change products or specifications without notice.

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