K9K8G08U0A_NAND_FLASH.pdf

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FLASH MEMORY

G08U1A

K9K8G08U0A K9NBG08U5A

K9XXG08UXA

* Samsung Electronics reserves the right to change products or specification without notice.

INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,

AND IS SUBJECT TO CHANGE WITHOUT NOTICE.

NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,

EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,

TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL

INFORMATION IN THIS DOCUMENT IS PROVIDED

ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND.

1. For updates or additional information about Samsung products, contact your nearest Samsung office.

2. Samsung products are not intended for use in life support, critical care, medical, safety equipment, or similar

applications where Product failure could result in loss of life or personal or physical harm, or any military or

defense application, or any governmental procurement to which special terms or provisions may apply.

FLASH MEMORY

G08U1A

K9K8G08U0A K9NBG08U5A

GENERAL DESCRIPTION

FEATURES

• Voltage Supply

- 2.70V ~ 3.60V

• Organization

- Memory Cell Array : (1G + 32M) x 8bit

- Data Register : (2K + 64) x 8bit

• Automatic Program and Erase

- Page Program : (2K + 64)Byte

- Block Erase : (128K + 4K)Byte

• Page Read Operation

- Page Size : (2K + 64)Byte

- Random Read : 25µs(Max.)

- Serial Access : 25ns(Min.)

* K9NBG08U5A : 50ns(Min.)

1G x 8 Bit / 2G x 8 Bit / 4G x 8 Bit NAND Flash Memory

• Fast Write Cycle Time

- Page Program time : 200µs(Typ.)

- Block Erase Time : 1.5ms(Typ.)

• Command/Address/Data Multiplexed I/O Port

• Hardware Data Protection

- Program/Erase Lockout During Power Transitions

• Reliable CMOS Floating-Gate Technology

- Endurance : 100K Program/Erase Cycles(with 1bit/512Byte

ECC)

- Data Retention : 10 Years

• Command Driven Operation

• Intelligent Copy-Back with internal 1bit/528Byte EDC

• Unique ID for Copyright Protection

• Package :

- K9K8G08U0A-PCB0/PIB0

48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)

- K9WAG08U1A-PCB0/PIB0

48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)

- K9WAG08U1A-ICB0/IIB0

52 - Pin TLGA (12 x 17 / 1.0 mm pitch)

- K9NBG08U5A-PCB0/PIB0

48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)

Offered in 1G x 8bit, the K9K8G08U0A is a 8G-bit NAND Flash Memory with spare 256M-bit. Its NAND cell provides the most cost-

effective solution for the solid state application market. A program operation can be performed in typical 200µs on the (2K+64)Byte

page and an erase operation can be performed in typical 1.5ms on a (128K+4K)Byte block. Data in the data register can be read out

at 25ns(K9NBG08U5A : 50ns) cycle time per Byte. The I/O pins serve as the ports for address and data input/output as well as com-

mand input. The on-chip write controller automates all program and erase functions including pulse repetition, where required, and

internal verification and margining of data. Even the write-intensive systems can take advantage of the K9K8G08U0A′s extended reli-

ability of 100K program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The

K9K8G08U0A is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable

applications requiring non-volatility.

An ultra high density solution having two 8Gb stacked with two chip selects is also available in standard TSOPI package and another

ultra high density solution having two 16Gb TSOPI package stacked with four chip selects is also available in TSOPI-DSP.

PRODUCT LIST

Part Number Vcc Range Organization PKG Type

K9K8G08U0A-Y

2.70 ~ 3.60V X8

TSOP1

G08U1A-Y

G08U1A-I 52TLGA

K9NBG08U5A-P TSOP1-DSP

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