高能质子辐照硅条传感器性能研究

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"质子辐照硅片传感器.pdf" 这篇文档主要探讨了硅片传感器在高能粒子实验中的应用，特别是质子辐照对其性能的影响。文章来自《核仪器与物理研究方法A》期刊，详细研究了在质子通量达到10^17 neq/cm²的情况下，硅条传感器的特性变化。关键词包括：硅、条形传感器、未来对撞机实验、10^17 neq/cm²。这表明研究集中在硅半导体技术在高亮度大型强子对撞机（HL-LHC）升级实验中的应用，以及在更高粒子通量环境下，如未来的强子对撞机实验，如何应对辐射效应。摘要指出，硅半导体探测器技术已经被用于HL-LHC的高亮度升级实验中，特别是在接近碰撞点的内部区域进行精确跟踪。在这些区域内，穿越的粒子通量可高达1×10^16 1-MeV neq/cm²。未来，对撞机可能会提供更高的亮度来进行稀有物理现象的搜索，这就要求探测器能够承受更大的辐射剂量。在本文中，作者Katsuya Sato等人来自日本筑波大学、日本高能加速器研究机构（KEK）和九州大学，他们对被质子辐照至10^17 neq/cm²的硅条传感器进行了深入研究。这种高剂量的质子辐照会导致硅传感器出现性能退化，例如电荷收集效率降低、噪声增加以及传感器的热稳定性变化等。通过实验和分析，研究人员旨在理解这些效应，以便为设计能够在极端环境条件下工作的更耐辐射的传感器提供理论依据。此外，文章可能还涵盖了以下内容： 1. 辐照效应的量化：可能详细描述了在不同质子通量下，硅条传感器的各项性能指标的变化，如漏电流、电荷收集效率、响应均匀性和传感器的噪声水平。 2. 材料老化模型：研究可能涉及了描述硅材料在高剂量辐射下老化的理论模型，以及这些模型如何帮助预测长期运行后的传感器性能。 3. 实验方法：实验设置、数据采集和分析过程的描述，以及用于评估和表征传感器性能的技术。 4. 抗辐射设计策略：可能讨论了采用不同材料、结构或工艺改进以提高传感器对辐射的抗性的策略。 5. 应用前景：在未来的高亮度对撞机实验中，如何利用这些研究结果来优化探测器设计，以确保在极端辐射环境中保持高性能。这篇文章是关于硅半导体传感器在高辐射环境下的性能研究，对于理解和优化这类传感器在粒子物理学实验中的应用具有重要意义。通过深入研究，科研人员可以开发出更耐用、性能更稳定的传感器，以适应未来对撞机实验的需求。

Nuclear Inst. and Methods in Physics Research, A 982 (2020) 164507

Contents lists available at ScienceDirect

Nuclear Inst. and Methods in Physics Research, A

journal homepage: www.elsevier.com/locate/nima

Characteristics of silicon strip sensor irradiated up to a proton fluence of

∕cm

Katsuya Sato

∗

, Kazuhiko Hara

, Kyoji Onaru

, Daigo Harada

, Sayaka Wada

Yoichi Ikegami

b,a

, Yoshinobu Unno

, Dai Kobayashi

, Manabu Togawa

, Koji Nakamura

Kazunori Hanagaki

University of Tsukuba, Tsukuba, Ibaraki 305-8571, Japan

KEK, Tsukuba, Ibaraki 305-0801, Japan

Kyushu University, Fukuoka 819-0395, Japan

A R T I C L E I N F O

Keywords:

Silicon

Strip

Future collider experiments

∕cm

A B S T R A C T

Silicon semiconductor detector technology has been adopted in experiments using the high-luminosity upgrade

of the CERN Large Hadron Collider (HL-LHC), to perform precision tracking in the inner region surrounding

the collision point, where the traversing particle fluence reaches 1 × 10

1-MeV n

∕cm

. In the future, hadron

colliders should provide even higher luminosities for rare physics searches, with detectors that exhibit even

better radiation hardness. Fabricated by Hamamatsu Photonics, n

-in-p microstrip detectors developed for

the HL-LHC were irradiated with 70 MeV protons up to a fluence of 10

∕cm

, and the changes in the

characteristics were evaluated to estimate the performance and possible improvements in the design of the

silicon detector for future experiments.

The characterization was conducted based on the methods developed for the characterization of the

ATLAS Inner Tracker strip sensors; the charge collection measured with penetrating

Sr 𝛽-rays, the interstrip

capacitance and aluminum strip resistance, the poly-silicon bias resistance, the implant strip resistance, and

the punch-through protection.

1. Introduction

High-energy particle colliders are a powerful tool in high-energy

physics experiments for understanding the fundamental nature of the

universe. Semiconductor silicon detectors have been successfully

adopted in such experiments and are expected to play an important

role in the future as precision charged particle tracking detectors. As the

radiation level in recent and future colliders is getting very high to per-

form precision physics research with increased accelerator luminosities,

the performance characterization of silicon detectors irradiated to such

high radiation levels is of great importance. For example, extensive

investigations have been carried out in designing the ATLAS Inner

Tracker (ITk) microstrip [1] and pixel sensors [2] for the Phase II

upgrade (HL) of the CERN Large Hadron Collider (LHC), referred to

as the HL-LHC. Radiation-induced impurities modify the bulk silicon

characteristics, typically increasing the full depletion voltage of the

p-type silicon due to the creation of trapping centers, which results

in a reduction of the charge collection efficiency. Ref. [3] reports

that the charge collection of silicon microstrip sensors irradiated to a

fluence of 10

/cm

is reduced to approximately one-fifth of that

∗

Corresponding author.

E-mail address: katsuya@hep.px.tsukuba.ac.jp (K. Sato).

before irradiation. In addition, the impurities act to increase the leakage

current, while sensor surface properties, such as the strip isolation, are

also affected [4].

In January 2019, a conceptual design report for the Future Circular

Collider (FCC) was submitted [5], which will aim to probe physics at

a higher scale than is achievable with the current LHC and HL-LHC

accelerators. The trackers in the FCC hadron collider will be exposed

to fluences of up to 8 × 10

n/cm

. We irradiated the ATLAS microstrip

sensors (ATLAS12 version [3,4,6]) with protons up to 1 × 10

n/cm

and evaluated the main sensor characteristics, such as charge collection

and surface properties, as a benchmark study for developing silicon

sensors that would be operational in such high radiation environments.

2. Tested sensors and proton irradiation

We evaluated ATLAS12EC n

-in-p microstrip sensors [6], fabricated

by Hamamatsu Photonics and designed as a prototype for the ATLAS

ITk endcap strip in 2012. The sensor dimensions are 1 cm × 1 cm ×

320 μm (thickness), containing 92 readout strip electrodes of 8 mm

https://doi.org/10.1016/j.nima.2020.164507

Received 22 February 2020; Received in revised form 4 July 2020; Accepted 2 August 2020

Available online 20 August 2020

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