Table 4 Characteristic values
Parameter Symbol Note or test condition Values Unit
Min. Typ. Max.
Drain-source on-state
resistance
R
DS(on)
I
D
= 108 A T
vj
= 25 °C,
V
GS(on)
= 18 V
7 9.9 mΩ
T
vj
= 100 °C,
V
GS(on)
= 18 V
10
T
vj
= 175 °C,
V
GS(on)
= 18 V
14
T
vj
= 25 °C,
V
GS(on)
= 15 V
8.9 11.1
Gate-emitter threshold
voltage
V
GS(th)
I
D
= 47 mA, V
DS
= V
GS
(tested aer 1 ms pulse
at V
GS
= 20 V)
T
vj
= 25 °C 3.5 4.2 5.2 V
T
vj
= 175 °C 3.6
Zero gate-voltage drain
current
I
DSS
V
DS
= 1200 V, V
GS
= 0 V T
vj
= 25 °C 860 µA
T
vj
= 175 °C 14.6
Gate leakage current I
GSS
V
DS
= 0 V V
GS
= 23 V 300 nA
V
GS
= -10 V -300
Forward transconductance g
fs
I
D
= 108 A, V
DS
= 20 V 72.6 S
Internal gate resistance R
G,int
f = 1 MHz, V
AC
= 25 mV 1.8 Ω
Input capacitance C
iss
V
DD
= 25 V, V
GS
= 0 V, f = 100 kHz, V
AC
= 25 mV 9170 nF
Output capacitance C
oss
V
DD
= 25 V, V
GS
= 0 V, f = 100 kHz, V
AC
= 25 mV 420 pF
Reverse transfer
capacitance
C
rss
V
DD
= 25 V, V
GS
= 0 V, f = 100 kHz, V
AC
= 25 mV 61 pF
C
oss
stored energy E
oss
V
DD
= 25 V, V
GS
= 0 V, f = 100 kHz, V
AC
= 25 mV 172 µJ
Total gate charge Q
G
V
DD
= 800 V, I
D
= 108 A, V
GS
= -2/18 V, turn-on
pulse
220 nC
Plateau gate charge Q
GS(pl)
V
DD
= 800 V, I
D
= 108 A, V
GS
= -2/18 V, turn-on
pulse
72 nC
Gate-to-drain charge Q
GD
V
DD
= 800 V, I
D
= 108 A, V
GS
= -2/18 V, turn-on
pulse
64 nC
Turn-on delay time t
d(on)
V
DD
= 800 V, I
D
= 108 A,
V
GS
= 0/18 V,
R
GS(on)
= 1 Ω,
R
GS(o)
= 1 Ω, diode:
body diode at V
GS
= 0 V ,
L
σ
= 15 nH
T
vj
= 25 °C 97 ns
T
vj
= 175 °C 92
(table continues...)
IMZA120R007M1H
CoolSiC
™
1200 V SiC Trench MOSFET
2 MOSFET
Datasheet 4 Revision 1.00
2022-01-31
剩余15页未读，继续阅读
芯脉芯城
- 粉丝: 4
- 资源: 4030
我的内容管理
展开
最新资源
- 最优条件下三次B样条小波边缘检测算子研究
- 深入解析：wav文件格式结构
- JIRA系统配置指南：代理与SSL设置
- 入门必备：电阻电容识别全解析
- U盘制作启动盘：详细教程解决无光驱装系统难题
- Eclipse快捷键大全：提升开发效率的必备秘籍
- C++ Primer Plus中文版：深入学习C++编程必备
- Eclipse常用快捷键汇总与操作指南
- JavaScript作用域解析与面向对象基础
- 软通动力Java笔试题解析
- 自定义标签配置与使用指南
- Android Intent深度解析：组件通信与广播机制
- 增强MyEclipse代码提示功能设置教程
- x86下VMware环境中Openwrt编译与LuCI集成指南
- S3C2440A嵌入式终端电源管理系统设计探讨
- Intel DTCP-IP技术在数字家庭中的内容保护
资源上传下载、课程学习等过程中有任何疑问或建议，欢迎提出宝贵意见哦~我们会及时处理！
点击此处反馈
