Temperature (°C)
Internal Oscillator (MHz)
-40 -20 0 20 40 60 80 100 120
43.32
43.33
43.34
43.35
43.36
43.37
43.38
43.39
43.4
D009
VDD = 2.7 V
VDD = 3 V
VDD = 3.3 V
VDD = 3.6 V
VDD (V)
Internal Oscillator (MHz)
2.7 2.8 2.9 3 3.1 3.2 3.3 3.4 3.5 3.6
43.32
43.33
43.34
43.35
43.36
43.37
43.38
43.39
43.4
43.41
D010
-40°C
-20°C
0°C
25°C
50°C
85°C
100°C
125°C
10
FDC2212
,
FDC2214
,
FDC2112
,
FDC2114
ZHCSDX2A –JUNE 2015–REVISED JUNE 2015
www.ti.com.cn
Copyright © 2015, Texas Instruments Incorporated
Typical Characteristics (continued)
Common test conditions (unless specified otherwise): Sensor capacitor: 1 layer, 20.9 x 13.9 mm, Bourns CMH322522-180KL
sensor inductor with L=18 µH and 33 pF 1% COG/NP0 Target: Grounded aluminum plate (176 x 123 mm), Channel =
Channel 0 (continuous mode) CLKIN = 40 MHz, CHx_FIN_SEL = b01, CHx_FREF_DIVIDER = b00 0000 0001
CH0_RCOUNT = 0xFFFF, SETTLECOUNT_CH0 = 0x0100, DRIVE_CURRENT_CH0 = 0x7800.
–40°C to +125°C
Figure 8. Internal Oscillator Frequency vs. Temperature
Data based on 1 unit
Figure 9. Internal Oscillator Frequency vs. VDD
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