SMJ28F010B Flash存储器数据手册

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TI-SMJ28F010B闪存芯片技术概述 TI-SMJ28F010B是一款1048576位、可编程、只读存储器，可以电池批量擦除和重新编程。它提供10000次编程/擦除周期耐用版本。技术参数 *存储容量：131072×8位，总存储容量为1048576位 *输入/输出电平：TTLCompatible *工作电压：VCCTolerance±10% *访问时间： + 28F010B-12：120ns + 28F010B-15：150ns + 28F010B-20：200ns *编程/擦除周期：10000次 *功耗： + 活动写入：55mW（VCC=5.5V） + 活动读取：165mW（VCC=5.5V） + 电气擦除：82.5mW（VCC=5.5V） + 待机：0.55mW（VCC=5.5V，CMOS-输入电平） *工作温度范围：-55°C to 125°C *封装形式：32引脚陶瓷600mil侧 brazed双列直插封装（DIP，JDD后缀）和无铅陶瓷芯片承载器（FE后缀）高可靠性 TI-SMJ28F010B 闪存芯片采用 MIL-PRF-38535 高可靠性加工工艺，确保产品的高可靠性和长寿命。编程算法 TI-SMJ28F010B 闪存芯片采用行业标准的编程算法，确保编程过程的可靠性和高效率。 latchup 免疫 TI-SMJ28F010B 闪存芯片具有250mA 的 latchup 免疫能力，保护芯片免受 latchup 事件的影响。应用领域 TI-SMJ28F010B 闪存芯片广泛应用于军事、航空航天、医疗、工业控制等领域，需要高可靠性和长寿命的存储解决方案。结论 TI-SMJ28F010B 闪存芯片是高性能、可靠性高、寿命长的存储解决方案，广泛应用于各个领域，满足不同应用场景的需求。

SMJ28F010B

131072 BY 8-BIT

FLASH MEMORY

SGMS738 – APRIL 1998

POST OFFICE BOX 1443 • HOUSTON, TEXAS 77251–1443

operation

Table 1 lists the modes of operation for the device.

Table 1. Operation Modes

FUNCTION

†

MODE

‡

(1)

(22)

(24)

(12)

(26)

(31)

DQ0–DQ7

(13–15, 17–21)

Read V

PPL

X X

Data Out

Output Disable V

PPL

X X

Hi-Z

Read

Standby and Write Inhibit V

PPL

X X X

Hi-Z

Read

orithm-Selection Mode V

PPL

Manufacturer-Equivalent

Code 89h

PPL

Device-Equivalent Code B4h

Read V

PPH

X X

Data Out

Read/

Output Disable V

PPH

X X

Hi-Z

Write

Standby and Write Inhibit V

PPH

X X X

Hi-Z

Write V

PPH

X X

Data In

†

X can be V

or V

‡

PPL

≤ V

+ 2 V; V

PPH

is the programming voltage specified for the device. For more details, see the recommended operating conditions.

read/output disable

When the outputs of two or more SMJ28F010B devices are connected in parallel on the same bus, the output

of any particular device in the circuit can be read with no interference from the competing outputs of other

devices. Reading the output of the SMJ28F010B is enabled when a low-level signal is applied to the E

and G

pins. All other devices in the circuit must have their outputs disabled by applying a high-level signal to one of

these pins.

standby and write inhibit

Active I

current can be reduced from 30 mA to 1 mA by applying a high TTL level on E or to 100 µA with a

high CMOS level on E

. In this mode, all outputs are in the high-impedance state. The SMJ28F010B draws active

current when it is deselected during programming, erasure, or program/erase verification. It continues to draw

active current until the operation is terminated.

algorithm-selection mode

The algorithm-selection mode provides access to a binary code identifying the correct programming and erase

algorithms. This mode is activated when A9 (pin 26) is forced to V

. Two identifier bytes are accessed by

toggling A0. All other addresses must be held low.

A0 low selects the manufacturer-equivalent code 89h, and

A0 high selects the device-equivalent code B4h, as shown in Table 2.

Table 2. Algorithm-Selection Modes

IDENTIFIER

PINS

IDENTIFIER

A0 DQ7 DQ6 DQ5 DQ4 DQ3 DQ2 DQ1 DQ0 HEX

Manufacturer-Equivalent Code V

1 0 0 0 1 0 0 1 89

Device-Equivalent Code V

1 0 1 1 0 1 0 0 B4

E =V

, G = V

, A1–A8 = V

, A9 = V

, A10–A16 = V

, V

= V

PPL

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SMJ28F010B Flash存储器数据手册

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