电子皮肤(E-Skin)：历史、设计与前沿进展
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电子皮肤（E-Skin）的发展历程是一个融合生物学、材料科学与信息技术的交叉领域，它源于对人类皮肤卓越性能的模仿和超越。自从人类皮肤的复杂结构和功能引起了科学家们的注意，特别是其作为感官输入的关键组件以来，E-Skin的研究一直在不断推进。自20世纪末起，随着柔性电子技术的进步，研究人员开始探索如何设计和制造出具有高度柔韧性、可扩展性和生物相容性的电子器件网络，以复制皮肤的触觉、热感应等功能。
早期的E-Skin研究侧重于基础材料和传感器的设计，如利用导电聚合物、有机半导体材料和纳米材料来构建传感器阵列。这些早期作品展示了电子皮肤在分辨率和热敏感性方面的潜在优势，比如能够实现比人体皮肤更精确的触觉感知。例如，通过微纳工程，能够制作出薄膜传感器，这些传感器能够捕捉微小的压力变化，甚至可以检测到液体流动或化学物质的存在，这些都是传统电子设备难以比拟的。
然而，E-Skin真正的价值在于其集成化和多功能性。为了模拟皮肤的全面功能，研究者们开始将多种传感器融合在一起，包括生物传感器（如血糖监测、气体检测）、化学传感器以及生物兼容的能源收集模块（如生物电能量转换），从而实现自我供电，这使得电子皮肤具备了更为持久和自主的工作能力。此外，生物降解性也成为E-Skin设计中的关键考虑因素，使得这种技术在医疗应用中具有更高的可持续性和安全性。
在未来，E-Skin的应用前景广阔，涵盖了人机交互、智能穿戴设备、假体、医疗诊断与治疗等多个领域。自主智能机器人的皮肤、仿生假肢、健康监测贴片以及环境适应性表面，都将是E-Skin技术展现其潜力的舞台。随着研究的不断深入和集成技术的突破，人们期待在不远的将来能够创造出功能齐全、接近真实皮肤体验的完全集成式电子皮肤。
总结来说，电子皮肤的发展历程是一场从基础材料到系统集成的革命，它不仅需要深入理解生物学原理，还需要结合材料科学、电子工程和生物医学的前沿技术。随着对皮肤功能的深入模拟和对性能提升的不懈追求，电子皮肤正逐步向更加智能化、个性化和生物相容性的方向迈进，展现出无限的创新可能性。
6004
wileyonlinelibrary.com
©
2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
REVIEW
www.advmat.de
controlled by rational design. Pop-up structures can be created
using chemical patterning to selectively bind parts of the device
to the substrate, allowing the unadhered sections of the fi lm to
buckle away from the substrate with a predefi ned wavelength
(Figure 3 d).
[ 147 ]
Pop-up structures have allowed Si nanoribbons
to be stretched to ≈100% strain,
[ 147b ]
many times higher than
the buckled, adhered nanoribbons. Similarly, the selective adhe-
sion of serpentine patterns to the substrate allows twisting and
extension out of the plane of the substrate, reducing the strain
in the material and affording a larger range of stretchability.
[ 14a ]
Buckling methods are attractive because of their compat-
ibility with conventional high-performance materials. Recently,
Chae et al. reported a hybrid method of making stretchable
transistors in which stretchable electrodes were combined with
a buckled alumina (Al
2
O
3
) dielectric layer, providing repro-
ducible performance up to 20% strain.
[ 148 ]
ZnO transistor
arrays stretchable up to 5% have been fabricated by transfer-
ring ZnO transistors onto prestrained substrates.
[ 149 ]
Although
the stretchability of these devices lags behind what would be
required for e-skin, the low-cost and good stability of oxide
semiconductors make them an attractive option for further
development.
The research group of John Rogers has pioneered many
of the techniques to make buckled devices from traditional
high-performance inorganic semiconductors and conductors.
Many of their devices use inorganic NWs, nanoplatelets, and
nanomembranes obtained by etching thin layers of material
from multilayer
[ 141a ]
or bulk wafers.
[ 150 ]
They have adhered inor-
ganic nanostructures to stretchable substrates using transfer
processing.
[ 151 ]
Such transfer methods can achieve cost-effec-
tive large-area coverage by distributing active elements fab-
ricated in a dense array over a larger area through successive
transfer steps
[ 150a,151a,152 ]
by automated systems,
[ 150a,152 ]
and can
be used to make three dimensional circuits by adding multiple
layers.
[ 151b ]
The group has formed semiconductor devices into
buckles,
[ 141a ]
pop-up structures,
[ 14a,147b ]
and serpentine mesh
layouts
[ 137 ]
to demonstrate a range of functionalities. In Sec-
tion 6, we describe several highly integrated devices based on
this technology, and a more comprehensive discussion can be
found in recent review articles.
[ 14c,154 ]
Rigid Device Islands Linked by Stretchable Interconnects :
High-performance stretchable systems can be realized by con-
necting conventional rigid device islands with interconnects
that have been made stretchable using patterning or buckling.
The strain in the substrate is highly localized near the edges
of the device islands.
[ 155 ]
As a result, interconnects experience
greatly increased strains near the edges of device islands that
can lead to failure of the devices.
[ 156 ]
Interconnects that are
not adhered to the substrate (that is, pop-up) can be used to
alleviate this strain,
[ 157 ]
as can grading the substrate’s elastic
modulus near the device islands.
[ 135d,158 ]
Using low-modulus
substrates is important for minimizing strain in the device
islands, and patterning the substrate into mesas can further
reduce the island strain.
[ 155,157 ]
Wagner and coworkers have
created functional device islands by fabricating amorphous
Si FETs directly onto elastomeric substrates and connecting
them with Au metallization.
[ 159 ]
Lacour and coworkers have
similarly fabricated OFETs directly on PDMS substrates.
[ 160 ]
By positioning the transistors on high-modulus regions of the
minimal change in the conductivity,
[ 135a ]
and multiple itera-
tions of serpentine patterning further improved stretchability
up to 300%.
[ 137 ]
Patterning a fl exible substrate into a discon-
tinuous fi lm is an attractive method of imparting stretchability
on the device level because it requires minimal changes to
established fabrication methods. With this technique, strain
is accommodated by twisting out of the plane of the distortion
(Figure 2 d).
[ 15a,136 ]
Buckling : Depositing a high-modulus thin fi lm onto a pre-
strained elastomeric substrate results in the formation of
wrinkled (buckled) fi lms upon relaxation of the system,
[ 138 ]
as
energy minimization induces the formation of sinusoidal wavy
patterns in the fi lm.
[ 139 ]
Uniaxial prestrain leads to the forma-
tion of linear buckles ( Figure 3 a),
[ 21a,140 ]
while biaxial prestrain
results in a herringbone bucking pattern (Figure 3 b).
[ 141 ]
With
buckles present, a device can be stretched to the value of the
prestrain without inducing considerable strain in the active
components. Similar results to buckling can be achieved by
structuring an elastomeric substrate with waves prior to fi lm
deposition, eliminating the need for prestrain.
[ 132,142 ]
Buck-
ling has been applied to a wide variety of materials, including
inorganic semiconductors, metals,
[ 143 ]
composites,
[ 144 ]
gra-
phene,
[ 145 ]
and CNTs.
[ 22,146 ]
We demonstrated that simply
straining and releasing a network of CNTs spray-coated onto
elastomeric substrates can result in the formation of buckles
(Figure 3 c).
[ 22 ]
Subsequently, the conductivity of the network
remains constant during stretching. Buckled fi lms of mechani-
cally compliant materials such as porous copper (Cu)
[ 143 ]
or silver (Ag) NWs
[ 134b ]
can sustain very large strains up to
460%.
[ 134b ]
However, very brittle materials such as Si nanorib-
bons can withstand only ≈20% strain.
[ 123 ]
Larger stretchability
can be achieved when the wavelength of the buckles can be
Figure 3. Buckling methods to impart stretchability in electronic devices.
a) Optical image of uniaxial buckles formed in the active layer of an
organic solar cell. Adapted with permission.
[ 21a ]
b) A herringbone pat-
tern resulting from biaxial buckling. Reproduced with permission.
[ 141a ]
Copyright 2007, American Chemical Society. c) Isotropically buckled CNT
networks formed by stretching and releasing the fi lm. Adapted with per-
mission.
[ 22 ]
Copyright 2011, Macmillan Publishers Ltd. d) Pop-up buckles
in Si nanoribbons formed by chemically patterning a PDMS substrate
with UV light. Adapted with permission.
[ 147b ]
Copyright 2006, Macmillan
Publishers Ltd.
Adv. Mater. 2013, 25, 5997–6038
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