TMC2160A：高性能步进电机驱动器集成电路

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"TMC2160A是一款针对步进电机驱动的集成电路，由TRINAMIC Motion Control GmbH & Co. KG制造。该芯片适用于2相步进电机，最大可驱动20A的线圈电流（需外接MOSFET）。它提供了微步进插值的Step/Dir接口，工作电压范围在8到60VDC之间，并具有SPI接口，支持最高256细分的全步进分辨率。此外，TMC2160A具备多种创新功能，如静音运行的StealthChop2技术、中频共振抑制、动态电机控制的SpreadCycle模式、负载依赖速度控制的DcStep、高精度无传感器电机负载检测的StallGuard2、节能高达75%的CoolStep电流控制、被动刹车和自由轮模式，以及全面的保护和诊断功能。这款芯片广泛应用于机器人与工业驱动、纺织机械、包装机、实验室自动化、高速3D打印机等多个领域。其封装尺寸为7x7mm2的TQFP48封装。" TMC2160A是一款集成度极高的步进电机驱动IC，专为实现高效、精确且低噪音的步进电机控制而设计。它的核心特性包括： 1. **Step/Dir Interface with MicroPlyer™**：通过Step/Dir信号输入，TMC2160A可以实现微步进插值，提高电机的定位精度和运动平滑性。 2. **SPI Interface**：串行外设接口允许用户通过数字信号对驱动器进行编程和配置，提供更高的灵活性。 3. **256 microsteps per full step**：提供最高256细分的分辨率，使得电机运行更加平稳，减少振动，提高定位精度。 4. **StealthChop2™**：这是一种静音运行技术，通过优化斩波器策略来降低电机噪音，使电机运行更加安静。 5. **Resonance Dampening**：针对中频共振问题，TMC2160A内置了抑制功能，改善电机在特定频率下的振动，确保稳定运行。 6. **SpreadCycle™**：这种高动态电机控制斩波器模式能快速响应电机负载变化，实现高速、精准的电机控制。 7. **DcStep™**：负载依赖的速控系统可以根据电机负载自动调整速度，确保电机在不同工况下的稳定运行。 8. **StallGuard2™**：利用传感器less技术，高精度检测电机负载状态，防止电机卡死或过载。 9. **CoolStep™**：智能电流控制技术根据实际需求调整电机电流，从而节省能源，最高可节省75%的能源。 10. **Passive Braking and Freewheeling mode**：被动刹车和自由轮模式可在电机停止时释放电机能量，提高系统安全性。 11. **Full Protection & Diagnostics**：集成多种保护机制，如过流、过温等，同时提供故障诊断信息，保障设备安全运行。这些特性使得TMC2160A成为众多应用领域的理想选择，包括但不限于机器人、工业自动化、纺织设备、包装机械、3D打印、实验室设备、医疗设备、办公室自动化、闭路电视、自动取款机和现金循环器、泵和阀门等。通过集成TMC2160A，开发者可以构建出高性能、低能耗且具有智能控制特性的步进电机驱动系统。

TMC2160 DATASHEET (Rev. 1.06 / 2020-MAY-19) 16

www.trinamic.com

3.3 Choosing MOSFETs and Slope

The selection of power MOSFETs depends on a number of factors, like package size, on-resistance,

voltage rating and supplier. It is not true, that larger, lower RDSon MOSFETs will always be better, as

a larger device also has higher capacitances and may add more ringing in trace inductance and power

dissipation in the gate drive circuitry. Adapt the MOSFETs to the required motor voltage (adding 5-10V

of reserve to the peak supply voltage) and to the desired maximum current, in a way that resistive

power dissipation still is low for the thermal capabilities of the chosen MOSFET package. The TMC2160

drives the MOSFET gates with roughly 10V, so normal, 10V specified types are sufficient. Logic level

FETs (4.5V specified RDSon) will also work, but may be more critical with regard to bridge cross-

conduction due to lower V

GS(th)

The gate drive current and MOSFET gate resistors R

(optional) determine switching behavior and

should basically be adapted to the MOSFET gate-drain charge (Miller charge). Figure 3.3 shows the

influence of the Miller charge on the switching event. Figure 3.4 additionally shows the switching

events in different load situations (load pulling the output up or down), and the required bridge

brake-before-make time.

The following table shall serve as a thumb rule for programming the MOSFET driver current

(DRVSTRENGTH setting) and the selection of gate resistors:

MOSFET MILLER CHARGE VS. DRVSTRENGTH AND R

Miller Charge

[nC] (typ.)

DRVSTRENGTH

setting

Value of R

[Ω]

<10

≤ 15

10…20

0 or 1

≤ 10

20…40

1 or 2

≤ 7.5

40…60

2 or 3

≤ 5

>60

≤ 2.7

The TMC2160 provides increased gate-off drive current to avoid bridge cross-conduction induced by

high dV/dt. This protection will be less efficient with gate resistors exceeding the values given in the

table. Therefore, for larger values of R

, a parallel diode may be required to ensure keeping the

MOSFET safely off during switching events.

MOSFET gate charge vs. switching event

– Total gate charge (nC)

– Gate to source voltage (V)

0 5 10 15 20 25

– Drain to source voltage (V)

MILLER

Figure 3.3 Miller charge determines switching slope

Hints

- Choose modern MOSFETs with fast and soft recovery bulk diode and low reverse recovery charge.

- A small, SMD MOSFET package allows compacter routing and reduces parasitic inductance effects.

TMC2160 DATASHEET (Rev. 1.06 / 2020-MAY-19) 17

www.trinamic.com

MOSFET drivers

BMx

12VOUT

Load pulling BMx down Load pulling BMx up

BBM

Miller plateau

Hx-

BMx

-V

BMx

Miller plateau

Effective break-before-make time

-1.2V

Output

slope

Output

slope

BBM

Figure 3.4 Slopes, Miller plateau and blank time

The following DRV_CONF parameters allow adapting the driver to the MOSFET bridge:

Parameter

Description

Setting

Comment

BBMTIME

Break-before-make time setting to ensure non-

overlapping switching of high-side and low-side

MOSFETs. BBMTIME allows fine tuning of times in

increments shorter than a clock period.

For higher times, use BBMCLKS.

0…24

time[ns]

100ns*32/(32-BBMTIME)

Ensure ~30% headroom

Reset Default: 0

BBMCLKS

Like BBMTIME, but in multiple of a clock cycle.

The longer setting rules (BBMTIME vs. BBMCLKS).

0…15

0: off

Reset Default: OTP 4 or 2

DRV_

STRENGTH

Selection of gate driver current. Adapts the gate

driver current to the gate charge of the external

MOSFETs.

0…3

Reset Default = 2

FILT_ISENSE

Filter time constant of sense amplifier to suppress

ringing and coupling from second coil operation

Hint: Increase setting if motor chopper noise

occurs due to cross-coupling of both coils.

(Reset Default = %00)

0…3

00: ~100ns (reset default)

01: ~200ns

10: ~300ns

11: ~400ns

DRV_CONF Parameters

Use the lowest gate driver strength setting DRVSTRENGTH giving favorable switching slopes, before

increasing the value of the gate series resistors. A slope time of nominal 40ns to 80ns is absolutely

sufficient and will normally be covered by the shortest possible Break-Before-Make time setting

(BBMTIME=0, BBMCLKS=0).

In case slower slopes have to be used, e.g. with large MOSFETs, ensure that the break-before-make

time (BBMTIME, optionally use BBMCLKS for times >200ns) sufficiently covers the switching event, in

order to avoid bridge cross conduction. The shortest break-before-make time, safely covering the

switching event, gives best results. Add roughly 30% of reserve, to cover production stray of MOSFETs

and driver.

TMC2160 DATASHEET (Rev. 1.06 / 2020-MAY-19) 18

www.trinamic.com

3.4 Tuning the MOSFET Bridge

A clean switching event is favorable to ensure low power dissipation and good EMC behavior.

Unsuitable layout or components endanger stable operation of the circuit. Therefore, it is important to

understand the effect of parasitic trace inductivity and MOSFET reverse recovery.

Stray inductance in power routing will cause ringing whenever the opposite MOSFET is in diode

conduction prior to switching on a low-side or high-side MOSFET. Diode conduction occurs during

break-before make time whenever the load current is inverse to the following bridge polarity. The

MOSFET bulk diode has a certain, type specific reverse recovery time and charge. This time typically is

in the range of a few 10ns. During reverse recovery time, the bulk diode will cause high current flow

across the bridge. This current is taken from the power supply filter capacitors (see thick lines Figure

3.5). Once the diode opens parasitic inductance tries to keep the current flowing. A high, fast slope

results and leads to ringing in all parasitic inductivities (see Figure 3.6). This may lead to bridge

voltage undershooting the GND level as well as fast pulses on VS and all MOSFET connections. It

must be ensured, that the driver IC does not see spikes on its BM pins to GND going below -5V.

Severe VS ripple might overload the charge-pump circuitry. Measure the voltage directly at the driver

pins to driver GND. The amount of undershooting depends on energy stored in parasitic inductivities

from low side drain to low side source and via the sense resistor RS to GND.

When using relatively small MOSFETs, a soft slope control requires a high gate series resistance. This

endangers safe MOSFET switch off. Add additional diodes to ensure safe MOSFET off conditions with

slow switch-on slopes (shown for right MOSFET pair in Figure 3.5).

Figure 3.7 shows performance of the basic circuit after adapting switching slope and adding 1nF

bridge output capacitors.

GNDD

GNDA

DIE PAD

BMA2

SRAH

Capacitor reduces

ringing on sense resistor.

SRAL

LA1

LA2

HA1

HA2

BMA1

CA1

CA2

Coil

out

47R



Decide use and value of the additional components based on measurements of the actual circuit using the final layout!

100n

1n,

100V

1n,

100V

2n2

RC-Filter protects SRAH /

SRAL and reduces spikes

seen by the chopper

: Reduce slope and protect the driver against ringing in the

interconnections between MOSFET and driver

220nF

Optional RC filter

against VS ringing

4.7µF

LOW-

ESR

Additional 1A type Schottky Diodes (selected for full VM range) in combination with R

to 1.0 Ohm) eliminate

undershooting of BM in case of high parasitic layout inductivity, e.g. with long interconnections to MOSFETs.

470pF to a few nF output

capacitors close to bridge

and / or output reduce

ringing and improve EMC

Filter capacitors placed near bridge

Optional gate diodes in combination

with very high value of R

Figure 3.5 Bridge protection options for power routing inductivity

TMC2160 DATASHEET (Rev. 1.06 / 2020-MAY-19) 20

www.trinamic.com

BRIDGE OPTIMIZATION EXAMPLE

A stepper driver for 6A of motor current has been designed using the MOSFET AOD4126 in the

standard schematic.

The MOSFETs have a low gate capacitance and offer roughly 50ns slope time at the lowest driver

strength setting. At lowest driver strength setting, switching quality is best (Figure 3.6), but still

shows a lot of ringing. Low side gate resistors have been added to slightly increase switching slope

time following high-side bulk diode conduction by increasing the effect of Gate-Drain (Miller) charge.

High side gate resistors have been added for symmetry. Tests showed, that 1nF output capacitors

dramatically reduce ringing of the power bridge following bulk diode conduction (Figure 3.7). Figure

3.8 shows the actual components and values after optimization.

GNDD

GNDA

DIE PAD

BMA2

SRAH

50m,

2512

SRAL

LA1

LA2

HA1

HA2

BMA1

CA1

470n

CA2

470n

4.7µF

10R 10R

10R

Coil

out

47R

1n,

100V

1n,

100V

10R

4x AOD4126

Figure 3.8 Example for bridge with tuned components (see scope shots)

BRIDGE LAYOUT CONSIDERATIONS

- Tune the bridge layout for minimum loop inductivity. A compact layout is best.

- Keep MOSFET gate connections short and straight and avoid loop inductivity between BM and

corresponding HS driver pin. Loop inductance is minimized with parallel traces, or adjacent traces

on adjacent layers. A wider trace reduces inductivity (don’t use minimum trace width).

- Minimize the length of the sense resistor connection to low-side MOSFET source, and place the

TMC2160 near the sense resistor’s GND connection, with its GND connections directly connected to

the same GND plane.

- Optimize switching behavior by tuning gate current setting and gate resistors. Add MOSFET bridge

output capacitors (470pF to a few nF) to reduce ringing.

- Measure the performance of the bridge by probing BM pins directly at the bridge or at the

TMC2160 using a short GND tip on the scope probe rather than a GND cable, if available.

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