经典光纤通信权威指南：关键技术与应用

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经典光纤通信教材深入探讨了光纤通信领域的核心理论和技术，由两位业界资深专家共同编撰。Ivan P. Kaminow是一位拥有42年职业经验的退休贝尔实验室科学家，他的贡献涵盖了广泛的光纤通信技术，如电光调制器、材料研究（包括拉曼散射在介电体中的应用）、集成光学、半导体激光器（如DBR、脊波导InGaAsP以及多频率器件）、双折射光纤以及密集波分复用（WDM）网络。他领导了WDM组件的研发，如掺铒光纤放大器（EDFAs）、阵列波导光栅（AWGs）和光纤法布里-珀罗滤波器，并对WDM的本地和广域网络做出了重要贡献。Kaminow教授还荣获了IEEE/OSA约翰·泰恩达尔奖、OSA查尔斯·汤斯奖以及IEEE/LEOS量子电子学奖。自2004年起，他在加利福尼亚大学伯克利分校担任兼职电气工程教授。另一编者Tingye Li，1998年从AT&T贝尔实验室和AT&T实验室退休，他的职业生涯长达41年。他的标志性工作集中在激光共振模式的研究上，这一领域被认为是经典之作。自20世纪60年代末以来，他和他的团队在光波技术和系统方面进行了开创性的工作，特别关注于光放大密集波分复用传输系统的研发。在他的倡导下，这些技术被广泛应用到网络升级中，推动了光纤通信技术的发展。这本书不仅涵盖了基础理论，还包括了光纤通信的实际应用案例和最新进展，对于理解光纤通信的历史演变、关键技术和市场趋势具有重要意义。无论是对初学者还是行业从业者，这都是一本不可或缺的参考文献，它深度剖析了光纤通信技术的各个方面，从物理原理到实际工程设计，为读者提供了全面的学习和研究指南。

growth rate, which generated enthusiasm and demand, leading to unsustainable

expectations. Could such a discontinuity happen again? Perhaps, but chastened

investors now seem to be following a more gradual and sensible path. Throughout

the “bubble-and-bust” until the present, the actual demand for bandwidth has

grown at a very healthy 80% per year globally; thus, real traffic demand

experienced no bubble at all. The growth and capacity needs are real, and should

continue in the future.

As a final comment, we note that optical fiber communications is firmly

entrenched as part of the global information infrastructure. The only question is

how deeply will it penetrate and complement other forms of communications, e.g.,

wireless, access, and on-premises networks, interconnects, satellites, etc. This

prospect is in stark contrast to the voice-based future seen by OFT, published in

1979, before the first commercial intercontinental or transatlantic cable systems

were deployed in the 1980s. We now have Tb/s systems for metro and long-haul

networks. It is interesting to contemplate wha t topics and concerns might appear in

OFT VI.

1.3 OFT V VOLUME A: COMPONENTS

AND SUBSYSTEMS

1.3.1 Chapter 1. Overview of OFT V volumes A & B

(Ivan P. Kaminow, Tingye Li, and Alan E. Willner )

This chapter briefly reviews herewith all the chapters contained in both volumes of

OFT V.

1.3.2 Chapter 2. Semiconductor quantum dots:

Genesis—The Excitonic Zoo—novel devices

for future applications (Dieter Bimberg)

The ultimate class of semiconductor nanostructures, i.e., “quantum dots” (QDs), is

based on “dots” smaller than the de Broglie wavelength in all three dimensions.

They constitute nanometer-sized clusters that are embedded in the dielectric

matrix of another semiconductor. They are often self-similar and can be formed

by self-organized growth on surfaces. Single or few quantum dots enable novel

devices for quantum information processing, and billions of them enable active

centers in optoelectronic devices like QD lasers or QD optical amplifiers. This

chapter covers the area of quantum dots from growth via various band structures to

optoelectronic device applications. In addition, high-speed laser and amplifier

operations are described.

1. Overview of OFT V Volumes A & B 3

1.3.3 Chapter 3. High-speed low-chirp semiconductor lasers

(Shun Lien Chuang, Guobin Liu, and Piotr Konrad

Kondratko)

One advantage of using quantum wells and quantum dots for the active region of

lasers is the lower induced chirp when such lasers are directly modulated, permit-

ting direct laser modulation that can save on the cost of separate external

modulators. This chapter provides a comparison of InAlGaAs with InGaAsP

long-wavelength quantum-well lasers in terms of high-speed performance, and

extracts the important parameters such as gain, differential gain, photon lifetime,

temperature dependence, and chirp. Both DC characteristics and high-speed direct

modulation of quantum-well lasers are presented, and a comparison with theore-

tical models is made. The chapter also provides insights into novel quantum-dot

lasers for high-speed operation, including the ideas of p-type doping vs tunneling

injection for broadband operation.

1.3.4 Chapter 4. Recent advances in surface-emitting lasers

(Fumio Koyama)

Vertical cavity surface-emitting las ers (VCSELs) have a number of special proper-

ties (compared with the more familiar edge-emitting lasers) that permit some novel

applications. This chapter begins with an introduction which briefly surveys recent

advances in VCSELs, several of that are then treated in detail. These include

techniques for realizing long-wavelength operation (as earlier VCSELs were

limited to operation near 850 nm), the performance of dense VCSEL arrays that

emit a range of discrete wavelengths (as large as 110 in number), and MEMS-

based athermal VCSELs. Also, plasmonic VCSELs that produce subwavelength

spots for high-density data storage and detection are examined. Finally, work on

all-optical signal processing and slow light is presented.

1.3.5 Chapter 5. Pump diode lasers (Christoph Harder)

Erbium-doped fiber amplifiers (EDFAs) pumped by bulky argon lasers were

known for several years before telecom system designers took them seriously;

the key development was a compact, high-power sem iconductor pump laser.

Considerable effort and investment have gone into today’s practical pump lasers,

driven by the importance of EDFAs in realizing dense wavelength division multi-

plexed (DWDM) systems. The emphasis has been on high power, efficiency, and

reliability. The two main wavelength ranges are in the neighborhood of 980 nm for

low noise and 1400 nm for remote pumping of EDFAs. The 1400-nm band is also

suitable for Raman amplifiers, for which very high power is needed.

4 Ivan P. Kaminow et al.

This chapter details the many lessons learned in the design for manufacture of

commercial pump lasers in the two bands. Based on the performance developed for

telecom, numerous other commercial applications for high-power lasers have

emerged in manufacturing and printing; these applications are also discussed.

1.3.6 Chapter 6. Ultrahigh-speed laser modulation by

injection locking (Connie J. Chang-Hasnain and

Xiaoxue Zhao)

It has been known for decades that one oscillator (the slave) can be locked in

frequency and phase to an external oscillator (the master) coupled to it. Current

studies of injection-locked lasers show that the dynamic characteristics of the

directly modulated slave are much improved over the same laser when freely

running. Substantial improvements are found in modulation bandwidth for analog

and digital modulation, in linearity, in chirp reduction and in noise performance.

In this chapter, theoretical and experimental aspects of injection locking in all

lasers are reviewed with emphasis on the authors’ research on VCSELs (verti cal

cavity surface-emitting lasers). A recent promising application in passive optical

networks for fiber to the home (FTTH) is also discussed.

1.3.7 Chapter 7. Recent developments in high-speed

optical modulators (Lars Thyle

n, Urban Westergren,

Petter Holmstro

m, Richard Schatz, and Peter Ja

nes)

Current high-speed lightwave systems make use of electro-optic modulators based

on lithium niobate or electroabsorption modulators based on semiconductor materi-

als. In commercial systems, the very high-speed lithium niobate devices often require

a traveling wave structure, while the semiconductor devices are usually lumped.

This chapter reviews the theory of high-speed modulators (at rates of 100 Gb/s)

and then considers practical design approaches, including comparison of lumped and

traveling-wave designs. The main emphasis is on electroabsorption devices based on

Franz–Keldysh effect, quantum-confined Stark effect and intersubband absorption.

A number of novel designs are described and experimental results given.

1.3.8 Chapter 8. Advances in photodetectors

(Joe Charles Campbell)

As a key element in optical fiber communications systems, photodetectors belong to

a well developed sector of photonics technology. Silicon p–i–n and avalanche photo-

diodes deployed in first-generation lightwave transmission systems operating at

0.82-mm wavelength performed very close to theory. In the 1980s, InP photodiodes

1. Overview of OFT V Volumes A & B 5

were developed and commercialized for systems that operated at 1.3- and 1.5-mm

wavelengths, albeit the avalanche photodiodes (APDs) were expensive and nonideal.

Introduction of erbium-doped fiber amplifiers and WDM technology in the 1990s

relegated APDs to the background, as p–i–n photoreceivers performed well in amplified

systems, whereas APDs were plagued by the amplified spontaneous emission noise.

Future advanced systems and special applications will require sophisticated devices

involving deep understanding of device physics and technology. This chapter focuses on

three primary topics: high-speed waveguide photodiodes for systems that operate at

100 Gb/s and beyond, photodiodes with high saturation current for high-power applica-

tions, and recent advances of APDs for applications in telecommunications.

1.3.9 Chapter 9. Planar lightwave circuits in fiber-optic

communications (Christopher R. Doerr and

Katsunari Okamoto)

The realization of one or more optical waveguide components on a planar substrate

has been under study for over 35 years. Today, individual components such as

splitters and arrayed waveguide grating routers (AWGRs) are in widespread

commercial use. Sophisticated functions, such as reconfigurable add–drop

multiplexers (ROADMs) and high-performance filters, have been demonstrated

by integrating elaborate combinations of such components on a single chip. For

the most part, these photonic integrated circuits (PICs), or planar lightwave

circuits (PLCs), are based on passive waveguides in lower index materials,

such as silica.

This chapter deals with the theory and design of such PICs. The following two

chapters (Chapters 11 and 12) also deal with PICs; however, they are designed to

be integrated with silicon electronic ICs, either in hybrid fashion by short wire

bonds to an InP PIC or directly to a silicon PIC.

1.3.10 Chapter 10. III–V photonic integrated circuits

and their impact on optical network architectures

(Dave Welch, Chuck Joyner, Damien Lambert, Peter

W. Evans, and Maura Raburn)

InP-based semiconductors are unique in their capability to support all the photonic

components required for wavelength division multiplexed (WDM) transmitters

and receivers in the telecom band at 1550 nm. Present subsys tems have connected

these individual components by fibers or lenses to form hybrid transmitters and

receivers for each channel.

Recently, integrated InP WDM transmitter and receiver chips that provide

10 channels, each operating at 10 Gb/s, have been shown to be technically and

6 Ivan P. Kaminow et al.

economically viable for deployment in commercial WDM systems. The photonic

integrated circuits are wire-bonded to adjacent silicon ICs. Thus a single board

provides optoelectronic regeneration for 10 channels, dramatically reducing

interconnection complexity and equipment space. In addition, as in legacy single-

channel systems, the “digital” approach for transmission (as compared to “all-optical”)

offers ease of network monitoring and management. This chapter covers the technology

of InP photonic integrated circuits (PICs) and their commercial application. The impact

on optical network architecture and operation is discussed and technology advances for

future systems are presented.

1.3.11 Chapter 11. Silicon photonics (Cary Gunn

and Thomas L. Koch)

Huge amounts of money have been invested in silicon processing technology,

thanks to a steady stream of applications that justified the next stage of proces-

sing development. In addition to investment, innovative design, process disci-

pline and large-volume runs made for economic success. The InP PICs described

in the previous c hapter owe their success to lessons learned in silicon IC

processing.

Many people have been attracted by the prospects of fabricating PICs using

silicon alone to capitalize on the investment and success of silicon ICs. To succeed

one requires a large-volume application and a design that can be made in an

operating silicon IC foundry facility. A further potential advantage is the oppor-

tunity to incorporate on the same photonic chip electronic signal processing. The

application to interconnects for high-performance computers is a foremost motiva-

tion for this work.

While silicon has proven to be the ideal material for electronic ICs, it is far from

ideal for PICs. The main shortcoming is the inability so far to make a good light

source or photodetector in silicon. This chapter discusses the successes and

challenges encountered in realizing silicon PICs to date.

1.3.12 Chapter 12. Photonic crystal theory: Temporal

coupled-mode formalism (Shanhui Fan)

Photonic crystal structures have an artificially created optical bandgap that is

introduced by a periodic array of perturbations, and different types of wave-

guides and cavities can be fabricated that uniquely use the band gap-based

confinement. These artificially created materials have been of great interest for

potential optical information processing applications, in part because they pro-

vide a common platform to miniaturize a large number of optical components

on-chip down to single wavelength scale. For this purpose, many devices can be

1. Overview of OFT V Volumes A & B 7

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