Generation of multi-wavelength erbium-doped fiber laser
by using MoSe
2
thin film as nonlinear medium and
stabilizer
Zian Cheak Tiu
1,
*, Harith Ahmad
1
, Arman Zarei
1
, and Sulaiman Wadi Harun
2
1
Photonics Research Center, University of Malaya, Kuala Lumpur 50603, Malaysia
2
Department of Electrical Engineering, Faculty of Engineering, University of Malaya,
Kuala Lumpur 50603, Malaysia
*Corresponding author: zc_tiu@hotmail.com
Received November 9, 2015; accepted January 25, 2016; posted online March 21, 2016
We experimentally demonstrate the application of MoSe
2
thin film as a nonlinear medium and stabilizer to
generate a multi-wavelength erbium-doped fiber laser. The cooperation of a photonic crystal fiber and a polari-
zation-dependent isolator induces unstable multi-wavelength oscillations based on the nonlinear polarization
rotation effect. A MoSe
2
thin film is further incorporated into the cavity to achieve a stable multi-wavelength.
The laser generates 7 lasings with a constant spacing of 0.47 nm at a pump power of 250 mW. The multi-
wavelength erbium-doped fiber laser is stable with power fluctuations of less than 5 dB over 30 min.
OCIS codes: 190.4370, 140.3500.
doi: 10.3788/COL201614.041901.
Multi-wavelength erbium-doped fiber lasers (EDFLs)
have many applications in optical communications, sen-
sors, and instrumentation. Many approaches have been
demonstrated to achieve multi-wavelength lasing at room
temperature, such as cascaded stimulated Brillouin scat-
tering
[1,2]
, incorporating a semiconductor optical amplifier
and four-wave mixing (FWM)
[3]
. Furthermore, the nonlin-
ear polarization rotation (NPR) technique is widely used
to generate multi-wavelengths due to its simplicity
[4,5]
.
On the other hand, two-dimensional (2D) materials
have great nonlinear optical (NLO) responses that can
be promising materials for optoelectronics application.
Among the different types of 2D materials, transition
metal dichalcogenides (TMDs) materials have shown ex-
cellent potential as the next generation of 2D materials
[6,7]
.
Basically, TMD materials can split into the following two
categories: sulfide-based and selenide-based. The main
difference between the sulfide-based and selenide-based
TMD materials is the weight of chalcogenide atoms. Sele-
nide-based TMD materials exhibit heavier chalcogenide
atoms, which leads to the reduction of the bandgap
energies. TMD materials have attracted considerable
attention as future optoelectronics materials due to the
nature of the layer-dependent optical properties present
[8]
.
Additionally, TMD materials exhibit other useful optical
properties, such as high non linearity, great ultrafast car-
rier dynamics, and strong optical absorption
[9]
. However,
most of the studies of 2D materials application only focus
on Q-switched and mode-locked laser generation
[8,10–12]
.
Other optical applications using TMD materials are yet
to be explored.
In this work, we have proposed and practically demon-
strated the application of TMD material as a birefringence
medium and stabilizer to generate a multi-wavelength
laser. Molybdenum diselenide (MoSe
2
) is fabricated into
a thin film and incorporated into an EDFL cavity to achieve
a stable multi-wavelength. To the best of our knowledge,
this is the first demonstration of a multi-wavelength EDFL
using MoSe
2
as a birefringence medium and stabilizer.
In this experiment, few-layer MoSe
2
is prepared by the
liquid phase exfoliation (LPE) method. The N-methyl-2-
pyrrolidine (NMP) solvent for the exfoliation of MoSe
2
is
mixed with a bulk powder with an initial concentration of
5 mg/mL. The solution is processed with a high-power
ultrasonicator for 8 h. The suspension is centrifuged at
3000 rpm for 60 min and the top 2/3 supernatant solution
is pipetted out for further characterization. The few-layer
MoSe
2
solution is then drop casted onto silica wafers to
conduct Raman spectroscopy using a Renishaw inVia
confocal Raman microscope at an excitation wavelength
of 488 nm and 3.5 mW power. As depicted in Fig.
1,
the out-of-plane vibration (A
1
g
) for bulk MoSe
2
is centered
at 240 cm
−1
, whereas the few-layer MoSe
2
is centered at
235 cm
−1
. The peak shift (5 cm
−1
) of few-layer MoSe
2
to
the lower region proved that the LPE process has success-
fully transformed the bulk MoSe
2
to few-layer MoSe
2
.
Next, the few-layer MoSe
2
solution is further processed
to become thin film. The few-layer MoSe
2
solution is
placed in a bath sonicator for 10 min. Next, 15 mL of
the few-layer MoSe
2
solution is mixed with 150 mg of pol-
yvinyl alcohol (PVA) dissolved in 15 mL of deionized (DI)
water (concentration of 10 mg/mL). The 30 mL solution
mixture is stirred and heated continuously at a fixed tem-
perature of 80°C using a magnetic stirrer. The solution is
reduced to approximately 10 mL after approximately 6 h.
This is followed by drying the remaining solution on a
glass substrate in an oven at 80°C for 4 h to obtain the
MoSe
2
thin film.
COL 14(4), 041901(2016) CHINESE OPTICS LETTERS April 10, 2016
1671-7694/2016/041901(4) 041901-1 © 2016 Chinese Optics Letters
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