5
DRV632
www.ti.com.cn
ZHCS030C –JANUARY 2011–REVISED AUGUST 2019
Copyright © 2011–2019, Texas Instruments Incorporated
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
7.2 ESD Ratings
VALUE UNIT
V
(ESD)
Electrostatic discharge
Human body model (HBM), per ANSI/ESDA/JEDEC JS-001
(1)
±1500
V
Charged-device model (CDM), per JEDEC specification JESD22-
C101
(2)
±4000
7.3 Recommended Operating Conditions
MIN NOM MAX UNIT
VDD Supply voltage DC supply voltage 3 3.3 3.6 V
R
L
Load impedance 0.6 10 kΩ
V
IL
Low-level input voltage Mute 40 % of VDD
V
IH
High-level input voltage Mute 60 % of VDD
T
A
Operating free-air temperature –40 25 85 °C
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report, SPRA953.
7.4 Thermal Information
THERMAL METRIC
(1)
DRV632
UNITPW (TSSOP)
14 PINS
R
θJA
Junction-to-ambient thermal resistance 130 °C/W
R
θJC(top)
Junction-to-case (top) thermal resistance 49 °C/W
R
θJB
Junction-to-board thermal resistance 63 °C/W
ψ
JT
Junction-to-top characterization parameter 3.6 °C/W
ψ
JB
Junction-to-board characterization parameter 62 °C/W
7.5 Electrical Characteristics
T
A
= 25°C (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
|V
OS
| Output offset voltage VDD = 3.3 V 0.5 1 mV
PSRR Power-supply rejection ratio 80 dB
V
OH
High-level output voltage VDD = 3.3 V 3.1 V
V
OL
Low-level output voltage VDD = 3.3 V –3.0
5
V
V
UVP_EX
External UVP detect voltage 1.25 V
V
UVP_EX_HYSTERESIS
External UVP detect hysteresis current 5 µA
f
CP
Charge pump switching frequency 200 300 400 kHz
|I
IH
| High-level input current, Mute VDD = 3.3 V, V
IH
= VDD 1 µA
|I
IL
| Low-level input current, Mute VDD = 3.3 V, V
IL
= 0 V 1 µA
I
DD
Supply current
VDD = 3.3 V, no load, Mute = VDD 5 14 25
mA
VDD = 3.3 V, no load, Mute = GND,
disabled
14
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