Carbide.c++:Symbian开发IDE详解与Eclipse平台

5星 · 超过95%的资源 需积分: 10 541 下载量 165 浏览量 更新于2024-08-01 收藏 943KB PDF 举报
"Carbide.c++教程深入解析" 本文档是一本针对Symbian开发的入门书籍,重点介绍了Carbide.c++,一种专门用于开发Symbian C++应用程序的集成开发环境(IDE)。该教程首先从Carbide.c++的介绍开始,强调了其免费版本Carbide.c++ Express的易用性和特点,该版本可在ForumNokia和UIQDeveloper网站获取。未来还会有商业版本发布,它们将拥有更多的特性。 文章指出,Carbide.c++建立在Eclipse平台之上,因为Eclipse的重要性不容忽视。Eclipse起源于2001年,由IBM与7家公司共同推出,作为一款开源的集成开发环境,旨在满足Java开发者的需求,并提供商业产品的免费替代品。IBM的4000万美元投资体现了其对开源社区发展的支持。 尽管最初专注于Java开发,但Eclipse很快发展成一个高度可扩展和灵活的平台,涵盖工具软件和客户端软件开发,成为众多公司如Symbian和Carbide.c++背后的基石。Eclipse基金会负责维护这个开源项目,如今已发展成为一个庞大的社区,致力于提供丰富的开发工具和框架。 Eclipse的核心架构是其成功的关键,它采用大量的可重用框架,包括统一用户界面、文件系统管理、文本编辑、编译器、调试工具、团队协作以及版本控制系统等。这些组件使得不同类型的工具可以无缝集成,为开发者创造了高效的工作环境。因此,理解并掌握Eclipse平台对于理解Carbide.c++的全貌至关重要,因为它提供了基础框架和统一的工作流支持。 这篇教程通过详细介绍Eclipse平台和Carbide.c++的关系,帮助读者了解如何有效地利用后者进行Symbian C++应用程序的开发,展示了其在移动开发领域的潜力和优势。学习者在阅读过程中,不仅能掌握开发工具的使用,还能了解到如何利用Eclipse的模块化设计来优化开发流程。

WIDE bandgap devices, such as silicon carbide (SiC) metal–oxide–semiconductor field-effect transis- tors (MOSFETs) present superior performance compared to their silicon counterparts [1]. Their lower ON-state resistance and faster switching capability attract lots of interest in high-power- density applications [2]. Faster switching speed enables lower switching loss and higher switching frequency, which is benefi- cial to high-efficiency and high power density. However, severe electromagnetic interference (EMI) and transient overvoltage issues caused by fast switching speed jeopardize the power quality and reliability of converters [3], [4]. Therefore, there is a tradeoff between efficiency and reliability in the choice of switching speed. An optimized design should ensure theoperation within both safe-operation-area and EMI limits, and switching loss should be as small as possible. A prediction method of switching performance is important and helpful for designer to evaluate and optimize converter design. The most concerned switching characteristics are switching loss, dv/dt, di/dt, and turn-ON/OFF overvoltage generally. These characteristics are crucial for the design of heatsink, filter, and gate driver. Related discussions have been presented in many existing research articles as following.请将这一段进行以下要求,Move analysis 语步(内容成分)分析; Language devices和实现该功能的语言手段(某些关键专有名词提供汉语翻译)

2023-06-13 上传

n the present research, a hybrid laser polishing technology combining pulsed laser and continuous wave laser was applied to polish the surface of laser directed energy deposition (LDED) Inconel 718 superalloy components. The surface morphology, microstructure evolution and microhardness of the as-fabricated, the single pulsed laser polishing (SPLP) and the hybrid laser polishing (HLP) processed samples were investigated. The results revealed that the as-fabricated sample has a rough surface with sintered powders. In the matrix, the NbC carbide and Cr2Nb based Laves phase array parallel to the build direction and the small γʺ-Ni3Nb particles precipitate in matrix uniformly. The surface roughness of the as-fabricated sample is 15.75 μm which is decreased to 6.14 μm and 0.23 μm by SPLP and HLP processing, respectively. The SPLP processing refines the grains and secondary phase significantly in the remelted layer which is reconstructured with the cellular structure and plenty of substructures. The HLP processing also refines the grain and secondary phase but the secondary phases still exhibit array distribution. In addition, the tangled dislocations pile up along the interface of secondary phases. Compared with the as-fabricated sample, the SPLP processing decreases the surface microhardness but the HLP processing increases the surface microhardness, and the Young's elasticity modulus of surface layer is improved by SPLP and HLP processing to 282 ± 5.21 GPa and 304 ± 5.57 GPa, respectively. 翻译

2023-07-25 上传