TI Information — Selective Disclosure
14
DRV3245E-Q1
SLVSEE6 –APRIL 2019
www.ti.com
Product Folder Links: DRV3245E-Q1
Submit Documentation Feedback Copyright © 2019, Texas Instruments Incorporated
Electrical Characteristics (continued)
Over recommended operation conditions –40°C ≤ T
J
≤ +175°C, 4.5 V ≤ PVDD ≤ 45 V (unless otherwise noted)
ITEM NO. PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
(1) Specified by design
5.16.0
V
DS_TRIP
Drain-source voltage protection limit
VDS_DIAG = 1 (Diagnostic Mode) TYP – 0.1 –0.2 TYP + 0.1
V
5.16.1 VDS_LEVEL = 0000 TYP – 0.06 0.1 TYP + 0.06
5.16.2 VDS_LEVEL = 0001 TYP – 0.06 0.15 TYP + 0.06
5.16.3 VDS_LEVEL = 0010 TYP – 0.06 0.2 TYP + 0.06
5.16.4 VDS_LEVEL = 0011 TYP – 0.06 0.25 TYP + 0.06
5.16.5 VDS_LEVEL = 0100 TYP – 0.06 0.3 TYP + 0.06
5.16.6 VDS_LEVEL = 0101 TYP – 0.06 0.35 TYP + 0.06
5.16.7 VDS_LEVEL = 0110 TYP – 0.06 0.4 TYP + 0.06
5.16.8 VDS_LEVEL = 0111 TYP – 0.06 0.45 TYP + 0.06
5.16.9 VDS_LEVEL = 1000 TYP – 0.06 0.5 TYP + 0.06
5.16.10 VDS_LEVEL = 1001 TYP – 0.11 0.6 TYP + 0.11
5.16.11 VDS_LEVEL = 1010 TYP – 0.11 0.7 TYP + 0.11
5.16.12 VDS_LEVEL = 1011 TYP – 0.11 0.8 TYP + 0.11
5.16.13 VDS_LEVEL = 1100 TYP – 0.11 0.9 TYP + 0.11
5.16.14 VDS_LEVEL = 1101 TYP – 0.11 1 TYP + 0.11
5.16.15 VDS_LEVEL = 1110, 1111 TYP – 0.2 2 TYP + 0.2
5.16.16
t
deg_VDS
VDS sense deglitch time
TVDS = 00 4.6 5.0 5.6
µs
5.16.17 TVDS = 01 1.6 1.75 2.1
5.16.18 TVDS = 10 3.2 3.5 4.0
5.16.19 TVDS = 11 6.3 7 7.8
5.16.20
t
blank_VDS
VDS sense blanking time
TBLANK = 00 0
µs
5.16.21 TBLANK = 01 1.5 1.75 2.1
5.16.22 TBLANK = 10 3.2 3.5 4.1
5.16.23 TBLANK = 11 6.3 7 7.8
5.16.24 t
vdsdly
VDS comparator delay
VDS (comparator input voltage) from 0V to max
V
DS_TRIP
, from VDRAIN to min V
DS_TRIP,
Delay
time of device internal comparator
3 µs
5.16.25 I
VDRAIN
VDRAIN sink current PHC_COMP_EN = 0 250 µA
FET GATE MONITORING (VGS MONITOR)
5.17.0a V
VGS_TRIP_H
VGS error detection threshold High-level INH (INL) = H, PVDD_UVFL = 0 6.5 8.5 V
5.17.0b V
VGS_TRIP_H2
VGS error detection threshold High-level INH (INL) = H, PVDD_UVFL = 1 1.2 2.3 V
5.17.1 V
VGS_TRIP_L
VGS error detection threshold Low-level INH (INL) = L 2 V
5.17.2 t
deg_VGS
VGS error detection deglitch time VGS_DEG = 01b 0.7 0.9 1.0 µs
5.17.3 t
blank_VGS
VGS error blanking time VGS_BLANK = 00b 2.2 2.5 2.81 µs
PHASE COMPARATOR
5.18.0 V
phcth_H
Phase comparator high threshold PHCTHMODE = 0
0.65 ×
VDRAIN
0.88 ×
VDRAIN
V
5.18.1 V
phcth_L
Phase comparator low threshold PHCTHMODE = 0
0.15 ×
VDRAIN
0.4 ×
VDRAIN
V
5.18.2 V
phcth_M-H
Phase comparator middle high threshold PHCTHMODE = 1
0.37 ×
VDRAIN
0.52 x
VDRAIN
0.67 ×
VDRAIN
V
5.18.3 V
phcth_M-L
Phase comparator middle low threshold PHCTHMODE = 1
0.33 ×
VDRAIN
0.48 x
VDRAIN
0.63 ×
VDRAIN
V
5.18.6 R
VDRAIN
Resistance of internal voltage driver from
VDRAIN to GND
Additional reistance when PHC_COMP_EN = 1 170 330 KΩ
5.18.4 t
pd_phcHL
DRV3245BE only
Propagation delay of phase comparator
high to low
Propagation delay of phase comparator High to
Low from SHx to PHCx, Cload=20pF; SHx input
test condition 14V – 0V / 1 ns
(1)
, From SHx =
88% to 15% of VDRAIN
1 μs
5.18.5 t
pd_phcLH
DRV3245BE only
Propagation delay of phase comparator
low to high
Propagation delay of phase comparator Low to
High from SHx to PHCx, Cload=20pF; SHx input
test condition 0V – 14V / 1 ns
(1)
, From SHx =
15% to 88% of VDRAIN
1 μs
LOW-SIDE SOURCE MONITOR
5.19.0 V
SL_TRIP
Low-side source fault detecting threshold;
SLx with respect to GND
1.8 2.3 V
5.19.1 t
deg_SL
Low-side source fault detection deglitch
time
3 4 μs