6
DRV110
ZHCS819G –MARCH 2012–REVISED MARCH 2018
www.ti.com.cn
Copyright © 2012–2018, Texas Instruments Incorporated
6.5 Electrical Characteristics
V
IN
= 14 V, –40°C ≤ T
A
≤ 125°C, over operating free-air temperature range (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
SUPPLY
I
Q
Standby current EN = 0, V
IN
= 14 V, bypass deactivated 200 250
µA
Quiescent current EN = 1, V
IN
= 14 V, bypass deactivated 360 570
Internally regulated supply
EN = 0, I
VIN
= 2 mA, bypass activated 10.5 15 19
V
EN = 1, I
VIN
= 2 mA, bypass activated 14.5 15 15.5
GATE DRIVER
V
DRV
Gate drive voltage Supply voltage in regulation V
IN
V
I
DRV_SINK
Gate drive sink current V
OUT
= 15 V; V
IN
= 15 V 8 15 mA
I
DRV_SOURCE
Gate drive source current V
OUT
= GND; V
IN
= 15 V –15 –10 mA
f
PWM
PWM clock frequency OSC = GND 15 20 27 kHz
D
MAX
Maximum PWM duty cycle 100%
D
MIN
Minimum PWM duty cycle 7.5%
t
D
Start-up delay
Delay between EN going high until gate driver
starts switching, f
PWM
= 20 kHz
50 µs
CURRENT CONTROLLER, INTERNAL SETTINGS
I
PEAK
Peak current R
SENSE
= 1 Ω, PEAK = GND 270 300 330 mA
I
HOLD
Hold current R
SENSE
= 1 Ω, HOLD = GND 40 50 65 mA
CURRENT CONTROLLER, EXTERNAL SETTINGS
t
KEEP
Externally set keep time at peak current C
KEEP
= 1 µF 100 ms
V
PEAK
Voltage of internal reference to which the
SENSE pin voltage is compared to for
I
PEAK
R
PEAK
= 50 kΩ 900
mV
R
PEAK
= 200 kΩ 300
V
HOLD
Voltage of internal reference to which the
SENSE pin voltage is compared for I
HOLD
R
HOLD
= 50 kΩ 150
mV
R
HOLD
= 200 kΩ 50
f
PWM
Externally set PWM clock frequency
R
OSC
= 160 kΩ 25
kHz
R
OSC
= 200 kΩ 20
LOGIC INPUT LEVELS (EN)
V
IL
Input low level 1.3 V
V
IH
Input high level 1.65 V
R
EN
Input pullup resistance 350 500 kΩ
Input pulldown resistance 250 kΩ
LOGIC OUTPUT LEVELS (STATUS)
V
OL
Output low level Pulldown activated, I
STATUS
= 2 mA 0.3 V
I
IL
Output leakage current Pulldown deactivated, V(STATUS) = 5 V 2 µA
UNDERVOLTAGE LOCKOUT
V
UVLO
Undervoltage lockout threshold 4.6 V
THERMAL SHUTDOWN
T
TSU
Junction temperature start-up threshold 140 °C
T
TSD
Junction temperature shutdown
threshold
160 °C
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