ST10F269-T3：高性能32MHz CPU与DSP功能详细规格

需积分: 9 16 浏览量更新于2024-07-21 收藏 1.49MB PDF 举报

身份认证购VIP最低享 7 折!

领优惠券(最高得80元）

"ST10F269-T3是一款高性能32MHz CPU，集成了DSP功能，具有16位架构，4级流水线，能在32MHz最大时钟频率下实现62.5ns的指令周期时间。它还配备了乘累加单元（MAC），支持16x16位乘法和40位累加器，以及重复单元和增强的布尔位操作功能。该芯片特别适合高级语言和操作系统，同时具备单周期上下文切换支持。在内存组织方面，ST10F269-T3内置了256KB单电压Flash存储器，可进行擦除/编程控制，耐擦写次数高达10万次。其线性地址空间最大可达16MB，用于代码和数据（与CAN接口结合时为5MB）。此外，还包括2KB内部RAM（IRAM）和10KB扩展RAM（XRAM）。芯片提供快速灵活的总线结构，外部总线特性可编程，适应不同的地址范围，支持8位或16位外部数据总线，以及复用或非复用的外部地址/数据总线。它有5个可编程的片选信号，并且具备Hold-acknowledge总线仲裁支持。中断系统方面，ST10F269-T3拥有8通道外围事件控制器，能实现单周期中断驱动的数据传输，并配备16级优先级中断系统，带有5个外部中断请求线。此外，还有其他丰富的外设接口和控制功能。在Flash内存的详细描述中，包括了概述、操作概览、架构描述等部分。读模式允许快速访问闪存中的数据，命令模式提供了对闪存的各种操作指令。Ready/Busy信号指示编程或擦除操作的状态。Flash状态寄存器用于监控闪存的操作状态，而Flash保护寄存器则可以设置以保护特定的闪存区域不被意外修改。指令描述涵盖了所有可用的闪存操作指令，包括重置处理和初始状态。Flash内存配置部分则指导用户如何配置和管理闪存空间。最后，应用示例部分给出了实际使用中的闪存地址处理方法。 ST10F269-T3是一款强大而全面的微处理器，适用于需要高性能计算和复杂内存管理的嵌入式系统设计。"

资源详情

资源推荐

ST10F269-T3

16/160

XPERCON (F024h / 12h) ESFR Reset Value: - - 05h

Note: - When both CAN are disabled via XPER-

CON setting, then any access in the

address range 00’EE00h - 00’EFFFh will

be directed to external memory interface,

using the BUSCONx register correspond-

ing to address matching ADDRSELx regis-

ter. P4.4 and P4.7 can be used as General

Purpose I/O when CAN2 is disabled, and

P4.5 and P4.6 can be used as General

Purpose I/O when CAN1 is disabled.

- The default XPER selection after Reset is

identical to XBUS configuration of

ST10C167: XCAN1 is enabled, XCAN2 is

disabled, XRAM1 (2K Byte compatible

XRAM) is enabled, XRAM2 (new 8K Byte

XRAM) is disabled.

- Register XPERCON cannot be changed

after the global enabling of XPeripherals,

i.e. after the setting of bit XPEN in the

SYSCON register.

- In EMUlation mode, all the XPERipherals

are enabled (XPERCON bit are all set).

The access to external memory and/or

XBus is controlled by the bondout chip.

- When the Real Time Clock is disabled

(RTCEN = 0), the clock oscillator is

switch-off if the ST10 enters in

power-down mode. Otherwise, when the

Real Time Clock is enabled, the bit

RTCOFF of the RTCCON register allows

to choose the power-down mode of the

clock oscillator (See Chapter 16 - Real

Time Clock).

15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0

--------

RTCEN

XRAM2EN XRAM1EN CAN2EN CAN1EN

RW RW RW RW RW

CAN1EN CAN1 Enable Bit

‘0’: Accesses to the on-chip CAN1 XPeripheral and its functions are disabled. P4.5 and P4.6 pins can be

used as general purpose I/Os. Address range 00’EF00h-00’EFFFh is only directed to external memory if

CAN2EN is also ‘0’.

‘1’: The on-chip CAN1 XPeripheral is enabled and can be accessed.

CAN2EN CAN2 Enable Bit

‘0’: Accesses to the on-chip CAN2 XPeripheral and its functions are disabled. P4.4 and P4.7 pins can be

used as general purpose I/Os. Address range 00’EE00h-00’EEFFh is only directed to external memory if

CAN1EN is also ‘0’.

‘1’: The on-chip CAN2 XPeripheral is enabled and can be accessed.

XRAM1EN XRAM1 Enable Bit

‘0’: Accesses to external memory within space 00’E000h to 00’E7FFh. The 2K Bytes of internal XRAM1

are disabled.

’1’: Accesses to the internal 2K Bytes of XRAM1.

XRAM2EN XRAM2 Enable Bit

‘0’: Accesses to the external memory within space 00’C000h to 00’DFFFh. The 8K Bytes of internal

XRAM2 are disabled.

’1’: Accesses to the internal 8K Bytes of XRAM2.

RTCEN RTC Enable Bit

’0’: Accesses to the on-chip Real Time Clock are disabled, external access is performed. Address range

00’EC00h-00’ECFFh is only directed to external memory if CAN1EN and CAN2EN are ’0’ also

’1’: The on-chip Real Time Clock is enabled and can be accessed.

ST10F269-T3

17/160

5 - INTERNAL FLASH MEMORY

5.1 - Overview

– 256K Byte on-chip Flash memory

– Two possibilities of Flash mapping into the CPU

address space

– Flash memory can be used for code and data

storage

– 32-bit, zero waitstate read access (62.5ns cycle

time at f

CPU

= 32MHz)

– Erase-Program Controller (EPC) similar to

M29F400B STM’s stand-alone Flash memory

• Word-by-Word Programmable (16µs typical)

• Data polling and Toggle Protocol for EPC

Status

• Ready/Busy signal connected on XP2INT

interrupt line

• Internal Power-On detection circuit

– Memory Erase in blocks

• One 16K Byte, two 8K Byte, one 32K Byte,

three 64K Byte blocks

• Each block can be erased separately

(1.5 second typical)

• Chip erase (8.5 second typical)

• Each block can be separately protected

against programming and erasing

• Each protected block can be temporary unpro-

tected

• When enabled, the read protection prevents

access to data in Flash memory using a pro-

gram running out of the Flash memory space.

Access to data of internal Flash can only be per-

formed with an inner protected program

– Erase Suspend and Resume Modes

• Read and Program another Block during erase

suspend

– Single Voltage operation, no need of dedicated

supply pin

– Low Power Consumption:

• 45mA max. Read current

• 60mA max. Program or Erase current

• Automatic Stand-by-mode (50µA maximum)

– 100,000 Erase-Program Cycles per block,

20 years of data retention time

– Operating temperature: -40 to +125

5.2 - Operational Overview

Read Mode

In standard mode (the normal operating mode)

the Flash appears like an on-chip ROM with the

same timing and functionality. The Flash module

offers a fast access time, allowing zero waitstate

access with CPU frequency up to 32MHz.

Instruction fetches and data operand reads are

performed with all addressing modes of the

ST10F269-T3 instruction set.

In order to optimize the programming time of the

internal Flash, blocks of 8K Bytes, 16K Bytes,

32K Bytes, 64K Bytes can be used. But the size of

the blocks does not apply to the whole memory

space, see details in Table 2.

Table 2 : 256K Byte Flash Memory Block Organization

Block Addresses (Segment 0) Addresses (Segment 1) Size (byte)

00’0000h to 00’3FFFh

00’4000h to 00’5FFFh

00’6000h to 00’7FFFh

01’8000h to 01’FFFFh

02’0000h to 02’FFFFh

03’0000h to 03’FFFFh

04’0000h to 04’FFFFh

01’0000h to 01’3FFFh

01’4000h to 01’5FFFh

01’6000h to 01’7FFFh

01’8000h to 01’FFFFh

02’0000h to 02’FFFFh

03’0000h to 03’FFFFh

04’0000h to 04’FFFFh

16K

32K

64K

ST10F269-T3

18/160

Instructions and Commands

All operations besides normal read operations are

initiated and controlled by command sequences

written to the Flash Command Interface (CI). The

Command Interface (CI) interprets words written

to the Flash memory and enables one of the

following operations:

– Read memory array

– Program Word

– Block Erase

– Chip Erase

– Erase Suspend

– Erase Resume

– Block Protection

– Block Temporary Unprotection

– Code Protection

Commands are composed of several write cycles

at specific addresses of the Flash memory. The

different write cycles of such command

sequences offer a fail-safe feature to protect

against an inadvertent write.

A command only starts when the Command

Interface has decoded the last write cycle of an

operation. Until that last write is performed, Flash

memory remains in Read Mode

Notes: 1. As it is not possible to perform write

operations in the Flash while fetching code

from Flash, the Flash commands must be

written by instructions executed from

internal RAM or external memory.

2. Command write cycles do not need to

be consecutively received, pauses are

allowed, save for Block Erase command.

During this operation all Erase Confirm

commands must be sent to complete any

block erase operation before time-out

period expires (typically 96µs). Command

sequencing must be followed exactly. Any

invalid combination of commands will reset

the Command Interface to Read Mode.

Status Register

This register is used to flag the status of the

memory and the result of an operation. This

the Erase-Program Controller (EPC) operation.

Erase Operation

This Flash memory features a block erase

architecture with a chip erase capability too. Erase

is accomplished by executing the six cycle erase

command sequence. Additional command write

cycles can then be performed to erase more than

one block in parallel. When a time-out period

elapses (96µs) after the last cycle, the

Erase-Program Controller (EPC) automatically

starts and times the erase pulse and executes the

erase operation. There is no need to program the

block to be erased with ‘0000h’ before an erase

operation. Termination of operation is indicated in

the Flash status register. After erase operation,

the Flash memory locations are read as 'FFFFh’

value.

Erase Suspend

A block erase operation is typically executed

within 1.5 second for a 64K Byte block. Erasure of

a memory block may be suspended, in order to

read data from another block or to program data in

another block, and then resumed.

In-System Programming

In-system programming is fully supported. No

special programming voltage is required. Because

of the automatic execution of erase and

programming algorithms, write operations are

reduced to transferring commands and data to the

Flash and reading the status. Any code that

programs or erases Flash memory locations (that

writes data to the Flash) must be executed from

memory outside the on-chip Flash memory itself

(on-chip RAM or external memory).

A boot mechanism is provided to support

in-system programming. It works using serial link

via USART interface and a PC compatible or other

programming host.

Read/Write Protection

The Flash module supports read and write

protection in a very comfortable and advanced

protection functionality. If Read Protection is

installed, the whole Flash memory is protected

against any "external" read access; read

accesses are only possible with instructions

fetched directly from program Flash memory. For

update of the Flash memory a temporary disable

of Flash Read Protection is supported.

The device also features a block write protection.

Software locking of selectable memory blocks is

provided to protect code and data. This feature

will disable both program and erase operations in

the selected block(s) of the memory. Block

Protection is accomplished by block specific

lock-bit which are programmed by executing a

four cycle command sequence. The locked state

of blocks is indicated by specific flags in the

according block status registers. A block may only

ST10F269-T3

19/160

be temporarily unlocked for update (write)

operations.

With the two possibilities for write protection -

whole memory or block specific - a flexible

installation of write protection is supported to

protect the Flash memory or parts of it from

unauthorized programming or erase accesses

and to provide virus-proof protection for all system

code blocks. All write protection also is enabled

during boot operation.

Power Supply, Reset

The Flash module uses a single power supply for

both read and write functions. Internally generated

and regulated voltages are provided for the

program and erase operations from 5V supply.

Once a program or erase cycle has been

completed, the device resets to the standard read

mode. At power-on, the Flash memory has a setup

phase of some microseconds (dependent on the

power supply ramp-up). During this phase, Flash

can not be read. Thus, if EA

pin is high (execution

will start from Flash memory), the CPU will remains

in reset state until the Flash can be accessed.

5.3 - Architectural Description

The Flash module distinguishes two basic

operating modes, the standard read mode and the

command mode. The initial state after power-on

and after reset is the standard read mode.

5.3.1 - Read Mode

The Flash module enters the standard operating

mode, the read mode:

– After Reset command

– After every completed erase operation

– After every completed programming operation

– After every other completed command

execution

– Few microseconds after a CPU-reset has

started

– After incorrect address and data values of

command sequences or writing them in an

improper sequence

– After incorrect write access to a read protected

Flash memory

The read mode remains active until the last

command of a command sequence is decoded

which starts directly a Flash array operation, such

as:

– erase one or several blocks

– program a word into Flash array

– protected / temporary unprotected a block.

In the standard read mode read accesses are

directly controlled by the Flash memory array,

delivering a 32-bit double Word from the

addressed position. Read accesses are always

aligned to double Word boundaries. Thus, both

low order address bit A1 and A0 are not used in

the Flash array for read accesses. The high order

address bit A17/A16 define the physical 64K Byte

segment being accessed within the Flash array.

5.3.2 - Command Mode

Every operation besides standard read operations

is initiated by commands written to the Flash

command register. The addresses used for

command cycles define in conjunction with the

actual state the specific step within command

sequences. With the last command of a command

sequence, the Erase-Program Controller (EPC)

starts the execution of the command. The EPC

status is indicated during command execution by:

– The Status Register,

– The Ready/Busy signal.

5.3.3 - Ready/Busy Signal

The Ready/Busy (R

/B) signal is connected to the

XPER2 interrupt node (XP2IC). When R

/B is high,

the Flash is busy with a Program or Erase

operation and will not accept any additional

program or erase instruction. When R

/B is Low,

the Flash is ready for any Read/Write or Erase

operation. The R

/B will also be low when the

memory is put in Erase Suspend mode.

This signal can be polled by reading XP2IC

when the Flash goes from Busy to Ready.

5.3.4 - Flash Status Register

The Flash Status register is used to flag the status

of the Flash memory and the result of an

operation. This register can be accessed by Read

cycles during the program-Erase Controller

operations. The program or erase operation can

be controlled by data polling on bit FSB.7 of

Status Register, detection of Toggle on FSB.6 and

FSB.2, or Error on FSB.5 and Erase Time-out on

FSB.3 bit. Any read attempt in Flash during EPC

operation will automatically output these five bits.

The EPC sets bit FSB.2, FSB.3, FSB.5, FSB.6

and FSB.7. Other bits are reserved for future use

and should be masked.

ST10F269-T3

20/160

Flash Status (see note for address)

Note: The Address of Flash Status Register is the address of the word being programmed when

Programming operation is in progress, or an address within block being erased when Erasing

operation is in progress.

15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0

-------- FSB.7 FSB.6 FSB.5 - FSB.3 FSB.2 - -

RRR R R

FSB.7 Flash Status bit 7: Data Polling Bit

Programming Operation: this bit outputs the complement of the bit 7 of the word being

programmed, and after completion, will output the bit 7 of the word programmed.

Erasing Operation: outputs a ‘0’ during erasing, and ‘1’ after erasing completion.

If the block selected for erasure is (are) protected, FSB.7 will be set to ‘0’ for about 100 µs, and

then return to the previous addressed memory data value.

FSB.7 will also flag the Erase Suspend Mode by switching from ‘0’ to ‘1’ at the start of the

Erase Suspend.

During Program operation in Erase Suspend Mode, FSB.7 will have the same behaviour as in

normal Program execution outside the Suspend mode.

FSB.6 Flash Status bit 6: Toggle Bit

Programming or Erasing Operations: successive read operations of Flash Status register will

deliver complementary values. FSB.6 will toggle each time the Flash Status register is read.

The Program operation is completed when two successive reads yield the same value. The

next read will output the bit last programmed, or a ‘1’ after Erase operation

FSB.6 will be set to‘1’ if a read operation is attempted on an Erase Suspended block. In

addition, an Erase Suspend/Resume command will cause FSB.6 to toggle.

FSB.5 Flash Status bit 5: Error Bit

This bit is set to ‘1’ when there is a failure of Program, block or chip erase operations.This bit

will also be set if a user tries to program a bit to ‘1’ to a Flash location that is currently

programmed with ‘0’.

The error bit resets after Read/Reset instruction.

In case of success, the Error bit will be set to ‘0’ during Program or Erase and then will output

the bit last programmed or a ‘1’ after erasing

FSB.3 Flash Status bit 3: Erase Time-out Bit

This bit is cleared by the EPC when the last Block Erase command has been entered to the

Command Interface and it is awaiting the Erase start. When the time-out period is finished,

after 96 µs, FSB.3 returns back to ‘1’.

FSB.2 Flash Status bit 2: Toggle Bit

This toggle bit, together with FSB.6, can be used to determine the chip status during the Erase

Mode or Erase Suspend Mode. It can be used also to identify the block being Erased

Suspended. A Read operation will cause FSB.2 to Toggle during the Erase Mode. If the Flash

is in Erase Suspend Mode, a Read operation from the Erase suspended block or a Program

operation into the Erase suspended block will cause FSB.2 to toggle.

When the Flash is in Program Mode during Erase Suspend, FSB.2 will be read as ‘1’ if address

used is the address of the word being programmed.

After Erase completion with an Error status, FSB.2 will toggle when reading the faulty sector.

剩余159页未读，继续阅读

qq_33314309

粉丝: 0
资源: 1

ST10F269-T3：高性能32MHz CPU与DSP功能详细规格

特快通TKT-T3对讲机写频软件

PMW3389DM-T3QU鼠标传感器

vmware nsx-t3序列号

怎么爬取https://price.pcauto.com.cn/top/sales/s1-t3-y2022-m12.html和https://price.pcauto.com.cn/top/sales/s1-t3-y2021-m12.html中的表格

怎么爬取https://price.pcauto.com.cn/top/sales/s1-t3-y2023-m4.html中的表格

怎么爬取https://price.pcauto.com.cn/top/sales/s1-t3-y2022-m12.html中的表格

如何爬取https://price.pcauto.com.cn/top/sales/s1-t3-y2023-m4.html中的表格

beta=180/(math.pi)*math.atan2(-T3_1,math.sqrt(T1_1^2+T2_1^2))

具体解释下定义四个变换矩阵T0-T3，分别对M2进行旋转和缩放操作

pvdispay Couldn't find device with uuid L1FhHb-WdWK-cBun-yddi-ooz8-T3Kp-QUKEny.

Command "python setup.py egg_info" failed with error code 1 in /tmp/pip-build-t3Mu2N/bcc/

在EES中用十参数法进行热泵仿真的代码

假设a初始值为100，则有3个事务： T1: a=a+100 T2: a=a-5 T3: a=a+50 这3个事务并发执行，可能的结果有哪些？哪些是满足数据一致性的？为什么？

利用maltab生成4个中间点的两轴运动，通过增加加速时间，比较轨迹不同

根据以下要求写一段c语言代码【样例输入】 x:=a+b*c/d-(e+f) 【样例输出】 T1:=b*c (*,b,c,T1) T2:=T1/d (/,T1,d,T2) T3:=a+T2 (+,a,T2,T3) T4:=e+f (+,e,f,T4) T5:=T3-T4 (-,T3,T4,T5) x:=T5 (:=,T5,-,x)

t1+t2*t3*t4=1; t2+t1*t3*t4=2; t3+t1*t2*t4=3; t4+t1*t2*t3=4;

现在有三个同时到达的作业 J1,J2 和 J3,它们的执行时间分别是 T1,T2,T3,且T1<T2<T3。系统按单道方式运行且采用短作业优先调度算法,则平均周转时间是()。 A T1+T2+T3 B (3T1+2T2+T3)/3 C (T1+T2+T3)/3 D (T1+2T2+3T3)/3

最新资源

根据以下要求写一段c语言代码【样例输入】 x:=a+bc/d-(e+f) 【样例输出】 T1:=bc (*,b,c,T1) T2:=T1/d (/,T1,d,T2) T3:=a+T2 (+,a,T2,T3) T4:=e+f (+,e,f,T4) T5:=T3-T4 (-,T3,T4,T5) x:=T5 (:=,T5,-,x)

t1+t2t3t4=1; t2+t1t3t4=2; t3+t1t2t4=3; t4+t1t2t3=4;