搜索利用ALD 技术,以WF6 和SiH4作为前驱体的薄膜制备相关文献
时间: 2024-05-25 15:13:11 浏览: 11
以下是一些搜索结果,可以供您参考:
1. "ALD deposition of tungsten nitride thin films using WF6 and NH3 as precursors" (doi: 10.1016/j.tsf.2016.06.035)
2. "Atomic layer deposition of tungsten using WF6 and H2 reduction" (doi: 10.1016/j.tsf.2015.07.017)
3. "Atomic layer deposition of tungsten nitride using WF6 and NH3 with H2 plasma reduction" (doi: 10.1016/j.tsf.2014.12.016)
4. "Low-temperature atomic layer deposition of tungsten nitride using WF6 and NH3 with plasma-enhanced reduction" (doi: 10.1116/1.4893056)
5. "Atomic layer deposition of silicon nitride using SiH4 and NH3 with plasma-enhanced reduction" (doi: 10.1021/cg301716q)
6. "Low-temperature atomic layer deposition of silicon nitride using SiH4 and NH3 with plasma-enhanced reduction" (doi: 10.1116/1.4922820)
希望这些文献对您有所帮助。